Abstract
ZnSnN2 is an emerging wide band gap earth-abundant semiconductor with potential applications in photonic devices such as solar cells, LEDs, and optical sensors. We report the characterization by ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy of reactively radio-frequency sputtered II–IV-nitride ZnSnN2 thin films. For samples transferred in high vacuum, the ZnSnN2 surface work function was 4.0 ± 0.1 eV below the vacuum level, with a valence-band onset of 1.2 ± 0.1 eV below the Fermi level. The resulting band diagram indicates that the degenerate bulk Fermi level position in ZnSnN2 shifts to mid-gap at the surface due to band bending that results from equilibration with delocalized surface states within the gap. Brief (< 10 s) exposures to air, a nitrogen-plasma treatment, or argon-ion sputtering caused significant chemical changes at the surface, both in surface composition and interfacial energetics. The relative band positioning of the n-type semiconductor against standard redox potentials indicated that ZnSnN2 has an appropriate energy band alignment for use as a photoanode to effect the oxygen-evolution reaction.
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L. Lahourcade, N. Coronel, K. Delaney, S.K. Shukla, N.A. Spaldin, H.A. Atwater, Adv. Mater. 25, 2562 (2013)
P. Quayle, K. He, J. Shan, K. Kash, MRS Commun. 3, 135 (2013)
N. Feldberg, J.D. Aldous, W.M. Linhart, L.J. Phillips, K. Durose, P.A. Stampe, R.J. Kennedy, D.O. Scanlon, G. Vardar, R.L. Field III, T.Y. Jen, R.S. Goldman, T.D. Veal, S.M. Durbin, Appl. Phys. Lett. 103, 042109 (2013)
K.T. Delaney, S.K. Shukla, N.A. Spaldin, in First-Principles Theoretical Assessment of Earth-Abundant Nitrides for Photovoltaic and Optoelectronic Applications using Hybrid Density Functionals
A. Punya, W.R.L. Lambrecht, Phys. Rev. B 84, 165204 (2011)
A. Punya, T.R. Paudel, W.R.L. Lambrecht, Phys. Status Solid C 8, 2492 (2011)
A. Punya, W.R.L. Lambrecht, Phys. Rev. B 88, 075302 (2013)
A.M. Shing, N.C. Coronel, N.S. Lewis, H.A. Atwater, APL Mater. 3, 076104 (2015)
N.C. Coronel, L. Lahourcade, K.T. Delaney, A.M. Shing, H.A. Atwater, Proc. 38th IEEE PVSC, p. 003204 (2012)
T.D. Veal, N. Feldberg, N.F. Quackenbush, W.M. Linhart, D.O. Scanlon, L.F.J. Piper, S.M. Durbin, Adv. Energy Mater. 5, 1501462 (2015)
N. Feldberg, J.D. Aldous, P.A. Stampe, R.J. Kennedy, T.D. Veal, S.M. Durbin, J. Electron. Mater. 43(4), 884 (2014)
N. Senabulya, N. Feldberg, R.A. Makin, Y. Yang, G. Shi, C.M. Jones, E. Kioupakis, J. Mathis, R. Clarke, S.M. Durbin, AIP Adv. 6, 075019 (2016)
C.H. Kuo, K.S. Chang, Cryst. Growth Des. 17(9), 4696–4702 (2017)
A.N. Fioretti, A. Stokes, M.R. Young, B. Groman, E.S. Toberer, A.C. Tamboli, A. Zakutayev, Adv. Electron. Mater. 3, 1600544 (2015)
R.L. Anderson, Solid State Electron. 5, 341 (1962)
A.G. Milnes, D.L. Feucht, Heterojunctions and Metal Semiconductor Junctions (Academic Press, New York, 1972)
M.J. Adams, A. Nussbaum, Solid State Electron. 22, 783–791 (1979)
A. Kudo, Y. Miseki, Chem. Soc. Rev. 38, 253–278 (2009)
L. Yang, H. Zhou, T. Fan, D. Zhang, Phys. Chem. Chem. Phys. 16, 6810–6826 (2014)
M.G. Walter, E.L. Warren, J.R. McKone, S.W. Boettcher, Q.X. Mi, E.A. Santori, N.S. Lewis, Chem. Rev. 110, 6446–6473 (2010)
R. Schlaf, H. Murata, Z.H. Kafafi, J. Electron Spectrosc. Relat. Phenom. 120, 149–154 (2001)
M. Schulz, E. Klausmann, A. Hurrle, CRC Crit. Rev. Solid State Sci. 5(3), 319–325 (1975)
C.T. Au, W. Hirsch, W. Hirschwald, Surf. Sci. 197(3), 391–401 (1988)
F. Streicher, S. Sadewasser, M.C. Lux-Steiner, Rev. Sci. Instrum. 80, 013907 (2009)
G.V. Hansson, R.I.G. Uhrberg, Surf. Sci. Rep. 9, 197–292 (1988)
P.T. Andrews, L.A. Hisscott, J. Phys. F Met. Phys. 5, 1568–1572 (1975)
J. Kubota, K. Domen, ECS Interface 24(2), 57–62 (2013)
T. Sahm, A. Gurlo, N. Barsan, U. Weimar, Sens. Actuators B 118, 78–83 (2006)
C.A. Dearden, M. Walker, N. Beaumont, I. Hancox, N.K. Unsworth, P. Sullivan, C.F. McConville, T.S. Jones, Phys. Chem. Chem. Phys. 16, 18926–18932 (2014)
A. Fuchs, H.J. Schimper, A. Klein, W. Jaegermann, Energy Proc. 10, 149–154 (2011)
K. Burger, F. Tschismarov, H. Ebel, J. Electron Spectrosc. Relat. Phenom. 10, 461 (1977)
Positions of photoelectron and auger lines on the binding energy scale (Al X-rays) (XPS International LLC, 2017). http://www.xpsdata.com/XI_BE_table.htm. Accessed 06 Dec 1999
C.D. Wagner, W.M. Riggs, L.E. Davis, J.F. Moulder, G.E. Muilenberg, Line positions from Al X-rays in numerical order, in Handbook of X-ray Photoelectron Spectroscopy, 1st edn, (Perkin-Elmer Corporation Physical Electronics, 1979), p. 187 (Table 4)
X. Bai, W. Jie, G. Zha, W. Zhang, P. Li, H. Hua, L. Fu, Appl. Surf. Sci. 255(18), 7966 (2009)
B. Conings, L. Baeten, C.D. Dobbelaere, J. D’Haen, J. Manca, H.G. Boyen, Adv. Mater. 26(13), 2041–2046 (2014)
F. Vaz, N. Martin, M. Fenker, Metallic Oxynitride Thin Films by Reactive Sputtering and Related Deposition Methods (Bentham Science Publishers, Sharjah, 2013)
H. Moormann, D. Kohl, G. Heiland, Surf. Sci. 80, 261–264 (1979)
K. Jacobi, G. Zwicker, A. Gutmann, Surf. Sci. 141(1), 109–125 (1984)
M. Batzill, U. Diebold, Prog. Surf. Sci. 79, 47–154 (2005)
V.I. Nefedov, I.A. Zakharova, I.I. Moiseev, M.A. Porai-koshits, M.N. Vargoftik, A.P. Belov, Zh. Neorg. Khimil 18, 3264 (1973)
D.E. Eastman, J.K. Cashion, Phys. Rev. Lett. 24(7), 310–313 (1970)
C.M. Eggleston, J.J. Ehrhardt, W. Stumm, Am. Miner. 81, 1036–1056 (1996)
J.L. Freeouf, D.E. Eastman, CRC Crit. Rev. Solid State Sci. 5(3), 245–258 (1975)
K. Nomura, T. Kamiya, E. Ikenaga, H. Yanagi, K. Kobayashi, H. Hosono, J. Appl. Phys. 109, 073726 (2011)
T.E. Fischer, Surf. Sci. 13(1), 30–51 (1969)
L.F. Wagner, W.E. Spicer, Phys. Rev. Lett. 28(21), 1381–1384 (1972)
J.N. Miller, I. Lindau, W.E. Spicer, Philos. Mag. B 43(2), 273–282 (1981)
D.R. Palmer, S.R. Morrison, C.E. Dauenbaugh, Phys. Rev. 129(2), 608–613 (1963)
A.J. Nozik, R. Memming, J. Phys. Chem. 100(31), 13061–13078 (1996)
Acknowledgements
We gratefully acknowledge support from the Dow Chemical Company under the earth-abundant semiconductor project. We also acknowledge the Joint Center for Artificial Photosynthesis and the Molecular Materials Research Center of the Beckman Institute at Caltech for instrument access. The authors thank Bruce Brunschwig and Kimberly Papadantonakis for guidance.
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Shing, A.M., Tolstova, Y., Lewis, N.S. et al. Effects of surface condition on the work function and valence-band position of ZnSnN2 . Appl. Phys. A 123, 735 (2017). https://doi.org/10.1007/s00339-017-1341-3
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DOI: https://doi.org/10.1007/s00339-017-1341-3