Skip to main content
Log in

Structure-related optical behavior of nanoscale GaN island, tip, tube and cone arrays formed by inductively coupled plasmas etching

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

We introduce a one-step self-assembled technique to form various nanostructures on N-type GaN film and then present an optical characterization of a series of low-dimensional GaN nanostructures by using low-temperature photoluminescence (LTPL) spectroscopy. Nanoscale GaN island, tip, tube and cone-like structures of diameters ranging from 50 to 190 nm were self-assembled on a c-axis perpendicular to substrate surface with uniform diameter and uniform length by inductively coupled plasmas etching process without lithography. Optical LTPL measurements on nanostructures show consistent variations in the properties of the fabricated GaN structures as a function of surface area of GaN nanostructures. LTPL mapping gives an evidence for defect-induced donors and/or acceptors near the facets of the ICP-etched nanostructure. Our results indicate that a higher concentration of donor-related defects is introduced on the surface of GaN nanotubes. In particular, the nanotubes sample exhibits a conspicuous increased in yellow luminescence intensity compared to the other nanostructure samples. This result may support more information for the application of nanotubes on nanogenerators.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6

Similar content being viewed by others

References

  1. S. Nakamura, G. Fasol, The Blue Laser Diode: GaN Based Light Emitters and Lasers (Springer, Berlin, 1997)

    Book  Google Scholar 

  2. Q. Chen, M. Gaska, M. Asif Khan, M.S. Shur, A. Ping, I. Adesida, J. Burm, W.J. Schaff, L.F. Eastman, Electron. Lett. 33, 637 (1997)

    Article  Google Scholar 

  3. Chong Zheng, Hu Anming, Tao Chen, Ken D. Oakes, Shibing Liu, Appl. Phys. A 121, 163 (2015)

    Article  ADS  Google Scholar 

  4. Shang-Chao Hung, Appl. Phys. A 117, 1765 (2014)

    Article  ADS  Google Scholar 

  5. F.A. Ponce, D.P. Bour, Nature (London) 386, 251 (1997)

    Article  Google Scholar 

  6. H. Morkoc, S.N. Mohammand, Science 267, 51 (1995)

    Article  ADS  Google Scholar 

  7. A. Thess, R. Lee, P. Nikolaev, H. Dai, P. Petit, J. Robert, C.H. Xu, Y.H. Lee, S.G. Kim, A.G. Rinzler, D.T. Colbert, G.E. Scuseria, D. Tomanek, J.E. Fischer, R.E. Smalley, Science 271, 483 (1996)

    Article  ADS  Google Scholar 

  8. X.F. Duan, C.M. Lieber, J. Am. Chem. Soc. 122, 188 (2000)

    Article  Google Scholar 

  9. Y. Li, X.L. Chen, Z.Y. Qiao, Y.G. Cao, Y.C. Lan, J. Cryst. Growth 213, 408 (2000)

    Article  ADS  Google Scholar 

  10. M. He, I. Minus, P. Zhou, S. NoorMohammed, J.B. Halpern, R. Jacobs, W.L. Sarney, L. Salamanca-Riba, R.D. Vispute, Appl. Phys. Lett. 77, 3731 (2000)

    Article  ADS  Google Scholar 

  11. E. Calleja, M.A. Sánchez-García, F. Calle, F.B. Naranjo, E. Muñoz, U. Jahn, K. Ploog, J. Sánchez, J.M. Calleja, K. Saarinen, P. Hautojärvi, Mater. Sci. Eng., B 82, 2 (2001)

    Article  Google Scholar 

  12. S.C. Hung, Y.K. Su, S.J. Chang, S.C. Chen, T.H. Fang, L.W. Ji, Phys. E 28, 115 (2005)

    Article  Google Scholar 

  13. W.S. Su, Y.F. Chena, C.L. Hsiao, L.W. Tu, Appl. Phys. Lett. 90, 063110 (2007)

    Article  ADS  Google Scholar 

  14. X. Wang, J. Song, F. Zhang, C. He, Z. Hu, Z. Wang, Adv. Mater. 22, 2155 (2010)

    Article  Google Scholar 

  15. Shang-Chao Hung, J. Electrochem. Soci. 158, H1265 (2011)

    Article  Google Scholar 

  16. S.C. Hung, Y.K. Su, T.H. Fang, S.J. Chang, L.W. Ji, Nanotechnology 16, 2203 (2005)

    Article  ADS  Google Scholar 

  17. J.C. Zolper, R.J. Shul, MRS Bull. 22, 36 (1997)

    Google Scholar 

  18. E. Hu, C.-H. Chen, D.L. Green, J. Vac. Sci. Technol., B 14, 3632 (1996)

    Article  Google Scholar 

  19. M. Rahman, J. Appl. Phys. 82, 2215 (1997)

    Article  ADS  Google Scholar 

  20. W.V. Schoenfeld, C.-H. Chen, P.M. Petroff, E.L. Hu, Appl. Phys. Lett. 73, 2935 (1998)

    Article  ADS  Google Scholar 

  21. O.J. Glembocki, J.A. Tuchman, J.A. Dagata, K.K. Ko, S.W. Pang, C.E. Stutz, Appl. Phys. Lett. 73, 114 (1998)

    Article  ADS  Google Scholar 

  22. S.J. Pearton, J.W. Lee, J.D. MacKenzie, C.R. Abernathy, R.J. Shul, Appl. Phys. Lett. 67, 2329 (1995)

    Article  ADS  Google Scholar 

  23. S.C. Hung, Y.K. Su, S.J. Chang, S.C. Chen, L.W. Ji, T.H. Fang, L.W. Tu, M. Chen, Appl. Phys. A 80, 1607 (2005)

    Article  ADS  Google Scholar 

  24. G. Yu, G. Wang, H. Ishikawa, H. Umeno, M. Soga, T. Egawa, J. Watanabe, T. Jimbo, Appl. Phys. Lett. 70, 3209 (1997)

    Article  ADS  Google Scholar 

  25. R.J. Shul, C.G. Willison, M.M. Bridges, J. Han, J.W. Lee, S.J. Pearton, C.R. Abernathy, J.D. Mackenzie, S.M. Donovan, Solid State Electron. 42, 2269 (1998)

    Article  ADS  Google Scholar 

  26. S.J. Pearton, J.C. Zolper, R.J. Shul, F. Ren, J. Appl. Phys. 86, 1 (1999)

    Article  ADS  Google Scholar 

  27. H. Yoshida, T. Urushido, H. Miyake, K. Hiramatsu, Jpn. J. Appl. Phys. 40, L1301 (2001)

    Article  ADS  Google Scholar 

  28. C.C. Yu, C.F. Chu, J.Y. Tsai, H.W. Huang, T.H. Hsueh, C.F. Lin, S.C. Wang, Jpn. J. Appl. Phys. 41, L910 (2002)

    Article  ADS  Google Scholar 

  29. Y.S. Park, T.W. Kang, R.A. Taylor, Nanotechnology 19, 475402 (2008)

    Article  ADS  Google Scholar 

  30. S.C. Jain, M. Willander, J. Narayan, R. Van Overstraeten, J. Appl. Phys. 87, 965 (2000)

    Article  ADS  Google Scholar 

  31. W. Götz, N.M. Johnson, C. Chen, H. Liu, C. Kuo, W. Imler, Appl. Phys. Lett. 68, 3144 (1996)

    Article  ADS  Google Scholar 

  32. J.J. Song, W. Shan, in Group III Nitride Semiconductor Compounds, ed. by B. Gil Clarendon (Clarendon Press, Oxford, 1998), pp. 182–241

    Google Scholar 

  33. S. Strite, H. Morkoç, J. Vac. Sci. Technol., B 10, 1237 (1992)

    Article  Google Scholar 

  34. R. Cheung, S. Withanage, R.J. Reeves, S.A. Brown, I. Ben-Yaacov, C. Kirchner, M. Kamp, Appl. Phys. Lett. 74, 3185 (1999)

    Article  ADS  Google Scholar 

  35. S.A. Brown, R.J. Reeves, C.S. Haase, R. Cheung, C. Kirchner, M. Kamp, Appl. Phys. Lett. 75, 3285 (1999)

    Article  ADS  Google Scholar 

  36. R. Cheung, R.J. Reeves, S.A. Brown, E. van der Drift, M. Kamp, J. Appl. Phys. 88, 7110 (2000)

    Article  ADS  Google Scholar 

  37. R. Cheung, R.J. Reeves, B. Rong, S.A. Brown, E.J.M. Fakkeldij, E. van der Drift, M. Kamp, J. Vac. Sci. Technol., B 17, 2659 (1999)

    Article  Google Scholar 

  38. J.B. Schlager, K.A. Bertness, P.T. Blanchard, L.H. Robins, A. Roshko, N.A. Sanford, J. Appl. Phys. 103, 124309 (2008)

    Article  ADS  Google Scholar 

  39. Q.X. Zhao, L.L. Yang, M. Millander, B.E. Sernelius, P.O. Holtz, J. Appl. Phys. 104, 73526 (2008)

    Article  Google Scholar 

  40. P. Perlin et al., Phys. Rev. Lett. 75, 296 (1995)

    Article  ADS  Google Scholar 

  41. W. Grieshaber, E.F. Schubert, I.D. Goepfert, R.F. Karlicek Jr, M.J. Schueman, C. Tran, J. Appl. Phys. 80, 4615 (1996)

    Article  ADS  Google Scholar 

  42. E.F. Schubert, I.D. Goepfert, J.M. Redwing, Appl. Phys. Lett. 71, 3224 (1997)

    Article  ADS  Google Scholar 

  43. T. Ogino, M. Aoki, Jpn. J. Appl. Phys. Part I 19, 2395 (1980)

    Article  ADS  Google Scholar 

  44. H.M. Chen, Y.F. Chen, M.C. Lee, M.S. Feng, Phys. Rev. B 56, 6942 (1997)

    Article  ADS  Google Scholar 

  45. J. Neugebauer, C. Van de Walle, Appl. Phys. Lett. 69, 503 (1996)

    Article  ADS  Google Scholar 

  46. T. Suski et al., Appl. Phys. Lett. 67, 2188 (1995)

    Article  ADS  Google Scholar 

Download references

Acknowledgments

This work was supported by the National Science Council of Taiwan under Contract No. MOST 104-2221-E-158-003 and the Shih Chien University Kaohsiung Campus USC-104-08-01004.

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Shang-Chao Hung.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Lin, CM., Huang, PH., Cheng, NJ. et al. Structure-related optical behavior of nanoscale GaN island, tip, tube and cone arrays formed by inductively coupled plasmas etching. Appl. Phys. A 122, 183 (2016). https://doi.org/10.1007/s00339-016-9653-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s00339-016-9653-2

Keywords

Navigation