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Growth and tribological properties of diamond films on silicon and tungsten carbide substrates

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Abstract

Hot filament chemical vapor deposition technique was used to deposit microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films on silicon (Si) and tungsten carbide (WC-6Co) substrates. Friction coefficient of larger diamond grains deposited on WC-6Co substrate shows less value approximately 0.2 while this differs marginally on films grown on Si substrate. The study claims that for a less friction coefficient, the grain size is not necessarily smaller. However, the less friction coefficient (less than 0.1 saturated value) in MCD and NCD deposited on Si is explained by the formation of graphitized tribolayer. This layer easily forms when diamond phase is thermodynamically unstable.

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Acknowledgments

The authors acknowledge Department of Science and Technology (DST) of India for the financial support (Grant No. SR/NM/NAT-02/2005). Dr. Niranjan Kumar, IGCAR is acknowledged for the Tribology measurements.

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  1. Department of Physics, Nano Functional Materials Technology (NFMTC), IITM, Chennai, Tamil Nadu, India

    R. Radhika & M. S. Ramachandra Rao

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  1. R. Radhika
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  2. M. S. Ramachandra Rao
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Correspondence to R. Radhika or M. S. Ramachandra Rao.

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Radhika, R., Ramachandra Rao, M.S. Growth and tribological properties of diamond films on silicon and tungsten carbide substrates. Appl. Phys. A 122, 937 (2016). https://doi.org/10.1007/s00339-016-0473-1

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