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Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD

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Abstract

Photoelectron spectroscopy has been employed to analyze the content and chemical states of the elements on the surface of AlN films with different thickness, which are synthesized by metalorganic chemical vapor deposition on the n-type SiC substrates under low pressure. It is found that, besides the carbon and gallium on the AlN surface, the atom percentage of surface oxygen increases from 4.9 to 8.4, and the electron affinity also increases from 0.36 to 0.97 eV, when the thickness of AlN films increase from 50 to 400 nm. Furthermore, accompanying with the high-resolution XPS spectra of the O 1s, it is speculated that surface oxygen may be the major influence on the electron affinity, where the surface oxygen changes the surface chemical states through replacing N to form Al–O bond and Ga–O bond, although there are also a few of Ga and C contaminations in the chemical sate of Ga–O and C–C, respectively.

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Acknowledgments

The authors acknowledge the support from the National Natural Science Foundation of China (Grant Nos. 61574135, 61574134, 61474142, 61474110, 61377020, 61376089, 61223005, and 61321063), One Hundred Person Project of the Chinese Academy of Sciences, and Basic Research Project of Jiangsu Province (Grant No. BK20130362).

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Authors and Affiliations

  1. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing, 100083, China

    F. Liang, P. Chen, D. G. Zhao, D. S. Jiang, Z. S. Liu, J. J. Zhu, J. Yang, W. Liu, X. G. He, X. J. Li, X. Li & S. T. Liu

  2. Center for Physicochemical Analysis and Measurement, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China

    Z. J. Zhao

  3. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215123, China

    H. Yang, J. P. Liu & L. Q. Zhang

  4. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130023, China

    Y. T. Zhang & G. T. Du

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  1. F. Liang
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  2. P. Chen
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Correspondence to P. Chen.

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Liang, F., Chen, P., Zhao, D.G. et al. Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD. Appl. Phys. A 122, 789 (2016). https://doi.org/10.1007/s00339-016-0312-4

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  • DOI: https://doi.org/10.1007/s00339-016-0312-4

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