Abstract
Bipolar switching properties and electrical conduction mechanism in Sn:SiO X thin-film RRAM devices were investigated and discussed. To complete the resistive switching properties of the stannum doped into silicon oxide thin films, the RTA-treated Sn:SiO X thin-film RRAM devices were investigated and discussed. In addition, the improvement qualities and electrical switching properties of the RTA-treated Sn:SiO X thin-film RRAM devices were carried out XPS, FT-IR, and IV measurement. The ohmic conduction with metal-like behavior and hopping conduction dependent activation energy properties by the Arrhenius plot equation in LRS of the Sn:SiO X thin films was investigated. The activation energy and hopping distance for the RTA-treated thin films were found to be 0.018 eV and 1.1 nm, respectively. For the compatibility with the IC processes, the RTA treatment was a promising method for the Sn:SiO X thin-film RRAM nonvolatile memory applications.
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C.T. Tsai, T.C. Chang, P.T. Liu, P.Y. Yang, Y.C. Kuo, K.T. Kin, P.L. Chang, F.S. Huang, Appl. Phys. Lett. 91(1), 012109 (2007)
C.T. Tsai, T.C. Chang, K.T. Kin, P.T. Liu, P.Y. Yang, C.F. Weng, F.S. Huang, J. Appl. Phys. 103(7), 074108 (2008)
M.C. Chen, T.C. Chang, S.Y. Huang, K.C. Chang, H.W. Li, S.C. Chen, J. Lu, Y. Shi, Appl. Phys. Lett. 94, 162111 (2009)
K.H. Chen, T.C. Chang, G.C. Chang, Y.E. Hsu, Y.C. Chen, H.Q. Xu, Appl. Phys. A: Mater. Sci. Process. 99(1), 291–295 (2010)
P.C. Yang, T.C. Chang, S.C. Chen, Y.S. Lin, H.C. Huang, D.S. Gan, Electrochem. Solid State Lett. 14(2), H93–H95 (2011)
Y.E. Syu, T.C. Chang, T.M. Tsai, Y.C. Hung, K.C. Chang, M.J. Tsai, M.J. Kao, S.M. Sze, IEEE Electron Device Lett. 32(4), 545–547 (2011)
L.W. Feng, C.Y. Chang, Y.F. Chang, W.R. Chen, S.Y. Wang, P.W. Chiang, T.C. Chang, Appl. Phys. Lett. 96, 052111 (2010)
L.W. Feng, C.Y. Chang, Y.F. Chang, T.C. Chang, S.Y. Wang, S.C. Chen, C.C. Lin, S.C. Chen, P.W. Chiang, Appl. Phys. Lett. 96, 222108 (2010)
K.H. Chen, Y.C. Chen, C.F. Yang, T.C. Chang, J. Phys. Chem. Solids 69, 461 (2008)
C.F. Yang, K.H. Chen, Y.C. Chen, T.C. Chang, I.E.E.E. Trans, Ultrason. Ferroelectr. Freq. Control 54, 1726 (2007)
C.F. Yang, K.H. Chen, Y.C. Chen, T.C. Chang, Appl. Phys. A 90, 329 (2008)
K.H. Chen, Y.C. Chen, Z.S. Chen, C.F. Yang, T.C. Chang, Appl. Phys. A 89, 533 (2007)
K.H. Chen, C.H. Chang, C.M. Cheng, C.F. Yang, Appl. Phys. A 97, 919 (2009)
K.H. Chen, C.M. Cheng, C.C. Shih, J.H. Tsai, Appl. Phys. A 103, 1173 (2011)
C.M. Cheng, K.H. Chen, J.H. Tsai, C.L. Wu, Ceram. Int. 38, S87 (2012)
C. Alessandro, F. Massimo, I. Daniele, F. Paolo, IEEE Electron Device Lett. 31(9), 1023–1025 (2010)
T.Y. Tseng, H. Nalwa, Hand book of nanoceramics and their based nano devices (American Scientific Publishers, USA, 2009), pp. 175–176
Daniele Ielmini, J. Appl. Phys. 102(5), 054517 (2007)
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The authors acknowledge the financial support from the National Science Council of the Republic of China (NSC 102-2633-E-272-001).
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Chen, KH., Chang, KC., Chang, TC. et al. Hopping conduction properties of the Sn:SiO X thin-film resistance random access memory devices induced by rapid temperature annealing procedure. Appl. Phys. A 119, 1609–1613 (2015). https://doi.org/10.1007/s00339-015-9144-x
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DOI: https://doi.org/10.1007/s00339-015-9144-x