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High-magnetic field annealing effect on room-temperature ferromagnetism enhancement of un-doped HfO2 thin films

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Abstract

Monoclinic HfO2 thin films with intrinsic defects were prepared by annealing in flowing argon. The behavior of the HfO2 films could be manipulated by applying an external magnetic field during annealing processing. Room-temperature ferromagnetism and visible photoluminescence were observed in these un-doped HfO2 films due to the involvement of oxygen vacancies. The results demonstrated that the density of oxygen vacancies in HfO2 films could be controlled by varying the intensity of the magnetic field. This study could facilitate understanding of ferromagnetism origin in un-doped oxides, also suggests an effective way to alter the intrinsic defects in HfO2 to improve its performance.

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Acknowledgments

The authors are very grateful to the financial support by the Chinese National Natural Science Foundation (Grant Nos. 51372135 and 61176003) and Tsinghua University Initiative Scientific Research Program.

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Authors and Affiliations

  1. State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

    Qian Xie, Weipeng Wang, Zheng Xie, Shuai Ning & Zhengcao Li

  2. The Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China

    Zhengjun Zhang

  3. Hi-Tech Institute of Xi’an, Xi’an, 710025, China

    Zheng Xie

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  1. Qian Xie
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  2. Weipeng Wang
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  3. Zheng Xie
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  5. Zhengcao Li
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Correspondence to Zhengjun Zhang.

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Xie, Q., Wang, W., Xie, Z. et al. High-magnetic field annealing effect on room-temperature ferromagnetism enhancement of un-doped HfO2 thin films. Appl. Phys. A 119, 917–921 (2015). https://doi.org/10.1007/s00339-015-9040-4

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  • DOI: https://doi.org/10.1007/s00339-015-9040-4

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