Skip to main content
SpringerLink
Log in

The role of metal contacts in the stability of n-type organic field effect transistors

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

We are presenting a long-time bias stress stability of C60-based n-type organic field effect transistors (OFETs), in bottom gate, top contacts configuration, with aluminium (Al), silver (Ag) and gold (Au) source–drain contacts. The results clearly shows that the bias stress effects in C60-based n-type OFETs is similar to p-type OFETs and it can be reduced by using an appropriate metal for the source–drain contacts. During the bias stress time, the threshold voltage shift and an increase in the contacts resistance have also been measured. On the basis of the stability of the device parameters, it is proposed that the Al source–drain contact-based devices gives better stability as compared to the devices with Ag and Au source–drain contacts. Our results show that the bias stress-induced threshold voltage shift is due to the trapping of charges in the channel region and in the vicinity of the source–drain contacts.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. H.E. Katz, A.J. Lovinger, J. Johnson, C. Kloc, T. Siegrist, W. Li, Y.-Y. Lin, A. Dodabalapur, Nature 404, 478 (2000)

    Article  ADS  Google Scholar 

  2. G. Schwabegger, M. Ullah, M. Irimia-Vladu, M. Reisinge, Y. Kanbur, R. Ahmed, P. Stadler, S. Bauer, N.S. Sariciftci, H. Sitter, Synth. Met. 161, 2058 (2011)

    Article  Google Scholar 

  3. H. Yan, Z. Chen, Y. Zheng, C. Newman, J.R. Quinn, F. Dötz, M. Kastler, A. Facchetti, Nature 457, 679 (2009)

    Article  ADS  Google Scholar 

  4. T. Sekitani, T. Someya, Mater. Today 14, 398 (2011)

    Article  Google Scholar 

  5. X. Zhao, X. Zhan, Chem. Soc. Rev. 40, 3728 (2011)

    Article  Google Scholar 

  6. H. Bai, G. Shi, Sensors 7, 267 (2007)

    Article  Google Scholar 

  7. R. Ahmed, A. Kadashchuk, C. Simbrunner, G. Schwabegger, M. Havlicek, E. Głowacki, N.S. Sariciftci, M.A. Baig, H. Sitter, Org. Electron. 15, 175 (2014)

    Article  Google Scholar 

  8. G.H. Gelinck, H.E.A. Huitema, E. van Veenendaal, E. Cantatore, L. Schrijnemakers, J.B.P.H. van der Putten, T.C.T. Geuns, M. Beenhakkers, J.B. Giesbers, B.H. Huisman, E.J. Meijer, E.M. Benito, F.J. Touwslager, A.W. Marsman, B.J.E. van Rens, D.M. de Leeuw, Nat. Mater. 3, 106 (2004)

    Article  ADS  Google Scholar 

  9. A. Selleo, R.J. Kline, D.M. De Longchamp, M.L. Chabinyc, Adv. Mater. 22, 3812 (2010)

    Article  Google Scholar 

  10. M. Caironi, M. Bird, D. Fazzi, Z. Chen, R. Di Pietro, C. Newman, A. Facchetti, H. Sirringhaus, Adv. Funct. Mater. 21, 3371 (2011)

    Article  Google Scholar 

  11. T. Sakanoue, H. Sirringhaus, Nat. Mater. 9, 3371 (2011)

    Google Scholar 

  12. S. Kobayshi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, Y. Iwasa, Nat. Mater. 3, 317 (2004)

    Article  ADS  Google Scholar 

  13. C.D. Dimitrakopoulos, P.R.L. Malenfant, Adv. Mater. 14, 100 (2002)

    Article  Google Scholar 

  14. R. Ahmed, C. Simbrunner, G. Schwabegger, M.A. Baig, H. Sitter, Synth. Met. 188, 136 (2014)

    Article  Google Scholar 

  15. H. Sirringhaus, Adv. Mater. 21, 3859 (2009)

    Article  Google Scholar 

  16. H. Jung, T. Lim, Y. Choi, M. Yi, J. Won, S. Pyo, Appl. Phys. Lett. 90, 163504 (2008)

    Article  ADS  Google Scholar 

  17. S.H. Han, J.H. Kim, J. Jang, S.M. Cho, M.H. Oh, S.H. Lee, D.J. Choo, Appl. Phys. Lett. 88, 07519 (2006)

    Google Scholar 

  18. R.A. Street, Phys. Rev. B 77, 165311 (2008)

    Article  ADS  Google Scholar 

  19. A. Nigam, G. Schwabegger, M. Ullah, R. Ahmed, I.I. Fishchuk, A. Kadashchuk, C. Simbrunner, H. Sitter, M. Premaratne, V.R. Rao, Appl. Phys. Lett. 101, 083305 (2012)

    Article  ADS  Google Scholar 

  20. D. Natali, M. Caironi, Adv. Mater. 24, 1357 (2012)

  21. M.G. Helander, Z.B. Wang, Z.H. Lu, Appl. Phys. Lett. 93, 083311 (2008)

    Article  ADS  Google Scholar 

  22. S. Braun, W.R. Salaneck, M. Fahlman, Adv. Mater. 21, 1450 (2009)

    Article  Google Scholar 

  23. S. Schols, L. van Willigenburg, R. Müller, D. Bode, M. Debucquoy, S. De Jonge, J. Genoe, P. Heremans, S. Lu, A. Facchetti, Appl. Phys. Lett. 93, 263303 (2008)

    Article  ADS  Google Scholar 

  24. S.Y. Kim, J.L. Lee, K.B. Kim, Y.H. Tak, Appl. Phys. Lett. 86, 133504 (2005)

    Article  ADS  Google Scholar 

  25. Q. Xu, J. Ouyang, Y. Yang, T. Ito, J. Kido, Appl. Phys. Lett. 83, 4695 (2003)

    Article  ADS  Google Scholar 

  26. S.A. Choulis, V.E. Choong, A. Patwardhan, M.K. Mathai, F. So, Adv. Funct. Mater. 16, 1075 (2006)

    Article  Google Scholar 

  27. A. Wan, J. Hwang, F. Amy, A. Kahn, Org. Electron. 6, 47 (2005)

    Article  Google Scholar 

  28. L. Lindell, M. Unge, W. Osikowiez, S. Stafström, W.R. Salaneck, X. Crispin, M.P. De Jong, Appl. Phys. Lett. 92, 163302 (2008)

    Article  ADS  Google Scholar 

  29. T. Richards, H. Sirringhaus, Appl. Phys. Lett. 92, 023512 (2008)

    Article  ADS  Google Scholar 

  30. S.D. Wang, T. Minari, T. Miyadera, Y. Aoyagi, K. Tsukagoshi, Appl. Phys. Lett. 92, 063305 (2008)

    Article  ADS  Google Scholar 

  31. Y. Yan, X.J. She, H. Zhu, S.D. Wang, Org. Electron. 12, 823 (2011)

    Article  Google Scholar 

  32. R. Ahmed, M. Sams, C. Simbrunner, M. Ullah, K. Rehman, G. Schwabegger, H. Sitter, T. Ostermann, Synth. Met. 161, 2562 (2012)

    Article  Google Scholar 

  33. A. Nagata, T. Oku, T. Akiyama, A. Suzuki, Y. Yamasaki, T. Mori, J. Nanotechnol 2011, 869596 (2011)

    Google Scholar 

  34. S.G.J. Mathijssen, M. Kemerink, A. Sharma, M. Cölle, P.A. Bobbert, R.A.J. Janssen, D.M. de Leeuw, Adv. Mater. 20, 975 (2008)

    Article  Google Scholar 

  35. S.D. Wang, Y. Yan, K. Tsukagoshi, IEEE Electron. Dev. Lett. 31, 509 (2010)

    Article  ADS  Google Scholar 

  36. S.D. Wang, T. Miyadera, T. Minari, Y. Aoyagi, K. Tsukagoshi, Appl. Phys. Lett. 91, 203508 (2007)

    Article  ADS  Google Scholar 

  37. R. Ahmed, C. Simbrunner, G. Schwabegger, M. A. Baig, H. Sitter, Stability of low voltage n-type organic field effect transistors. Synth. Met. (submitted 2014)

  38. A. Salleo, R.A. Street, J. Appl. Phys. 94, 471 (2003)

    Article  ADS  Google Scholar 

  39. T. Matsushima, M. Yahiro, C. Adachi, Appl. Phys. Lett. 91, 103505 (2007)

    Article  ADS  Google Scholar 

  40. L. Tsetseris, S.T. Pantelides, Phys. Rev. B 82, 045201 (2010)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, 4040, Linz, Austria

    Rizwan Ahmed, Clemens Simbrunner, G. Schwabegger & H. Sitter

  2. National Center for Physics, Quaid-e-Azam University Campus, Islamabad, Pakistan

    Rizwan Ahmed & M. A. Baig

Authors
  1. Rizwan Ahmed
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Clemens Simbrunner
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. Schwabegger
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. M. A. Baig
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. H. Sitter
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Rizwan Ahmed.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Ahmed, R., Simbrunner, C., Schwabegger, G. et al. The role of metal contacts in the stability of n-type organic field effect transistors. Appl. Phys. A 117, 2235–2240 (2014). https://doi.org/10.1007/s00339-014-8652-4

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-014-8652-4

Keywords

Search

Navigation