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Tip-based nanoscale selective growth of discrete silicon nanowires by near-field laser illumination

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Abstract

Growth of discrete silicon nanowires is reported with nanoscale location selectivity by employing near-field laser illumination. An uncoated dielectric atomic force microscope (AFM) tip provides a nanometer-scale light source that is sufficiently localized to induce nucleation and subsequent growth of a single nanowire under its optical near-field. Far-field laser-induced heating is additionally supplied to the substrate to both relieve the required near-field light budget and also assist stable epitaxial growth. Specific catalysts are selected for the nanowire growth by non-contact mode AFM imaging. Through real-time monitoring of the deflection of the AFM cantilever during the growth process, the gap between the tip and the sample and hence truly near-field illumination are maintained throughout the growth process. The study shows that tip-based near-field laser illumination could be an effective tool for the direct integration of semiconductor nanowires.

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Acknowledgments

The authors gratefully acknowledge support by DARPA/MTO under Grant N66001-08-1-2041. SEM analysis performed at the National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, was supported by the Scientific User Facilities Division of the Office of Basic Energy Sciences, U.S. Department of Energy under Contract No. DE-AC02-05CH11231.

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Authors and Affiliations

  1. Department of Mechanical Engineering, University of California, Berkeley, CA, 94720-1740, USA

    Sang-gil Ryu, Eunpa Kim & Costas P. Grigoropoulos

  2. Department of Mechanical Engineering, University of New York at Stony Brook, New York, NY, 11794, USA

    David J. Hwang

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  1. Sang-gil Ryu
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  2. David J. Hwang
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  3. Eunpa Kim
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  4. Costas P. Grigoropoulos
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Correspondence to Costas P. Grigoropoulos.

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Ryu, Sg., Hwang, D.J., Kim, E. et al. Tip-based nanoscale selective growth of discrete silicon nanowires by near-field laser illumination. Appl. Phys. A 116, 51–58 (2014). https://doi.org/10.1007/s00339-014-8480-6

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  • DOI: https://doi.org/10.1007/s00339-014-8480-6

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