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Structural and electronic properties of doped oligothiophenes in the presence of p-toluenesulfonate acids

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Abstract

We investigate the geometric and electronic structure of singly oxidized oligothiophenes in the presence of the counterion named p-toluenesulfonate acid (p-TSA) by performing ab initio density functional theory calculations using Becke-Half-and-Half-Lee-Yang-and-Parr hybrid functional on chains of up to 12 thiophene rings. Different possibilities of positioning the counterion along the conjugated chain are studied. The calculations indicate that the side orientation is the most stable structure of pTh/p-TSA complex. Further, the influence of the counterion on the charge distribution and structural geometry of charged oligothiophenes is also investigated. In the last part of the work, the solid-state packing effects are considered by studying the stacking of two conjugated chains in the presence of two counterions. Our results are consistent with several experimental observations on similar conjugated polymers.

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Conflict of interest

The authors declare that they have no conflict of interest.

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Authors and Affiliations

  1. LPR Lab., Department of Physics, University of Annaba, BP12, 23000, S/Amar, Annaba, Algeria

    Amar Chaalane

  2. SEN Department, ESYCOM, ESIEE - Paris, 2 bd Blaise Pascal, BP99, 93162, Noisy-le-Grand, France

    Amar Chaalane

  3. Department of Electrotechnics, University of Laghouat, Rte. de Ghardaia, 03000, Laghouat, Algeria

    Amar Chaalane & Djillali Mahi

  4. Laboratory for Chemical Technology, Ghent University, Technologiepark-Zwijnaarde 914, 9052, Ghent, Belgium

    Ahmed Dkhissi

  5. LAAS-CNRS, 7, avenue du Colonel Roche, BP 54200, 31031, Toulouse, France

    Ahmed Dkhissi

Authors
  1. Amar Chaalane
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  2. Djillali Mahi
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  3. Ahmed Dkhissi
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Correspondence to Amar Chaalane or Ahmed Dkhissi.

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Chaalane, A., Mahi, D. & Dkhissi, A. Structural and electronic properties of doped oligothiophenes in the presence of p-toluenesulfonate acids. Theor Chem Acc 134, 66 (2015). https://doi.org/10.1007/s00214-015-1663-1

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  • DOI: https://doi.org/10.1007/s00214-015-1663-1

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