Abstract
In this paper, we consider a numerical approximation of the Van Roosbroeck’s drift–diffusion system given by a backward Euler in time and finite volume in space discretization, with Scharfetter–Gummel fluxes. We first propose a proof of existence of a solution to the scheme which does not require any assumption on the time step. The result relies on the application of a topological degree argument which is based on the positivity and on uniform-in-time upper bounds of the approximate densities. Secondly, we establish uniform-in-time lower bounds satisfied by the approximate densities. These uniform-in-time upper and lower bounds ensure the exponential decay of the scheme towards the thermal equilibrium as shown in Bessemoulin-Chatard (Numer Math 25(3):147–168, 2016).
Similar content being viewed by others
References
Alikakos, N.D.: \(L^{p}\) bounds of solutions of reaction–diffusion equations. Comm. Partial Differ. Equ. 4(8), 827–868 (1979)
Angermann, L.: A mass-lumping semidiscretization of the semiconductor device equations. I. Properties of the semidiscrete problem. COMPEL 8(2), 65–105 (1989)
Bessemoulin-Chatard, M., Chainais-Hillairet, C.: Exponential decay of a finite volume scheme to the thermal equilibrium for drift–diffusion systems. J. Numer. Math. 25(3), 147–168 (2016)
Bessemoulin-Chatard, M., Chainais-Hillairet, C., Filbet, F.: On discrete functional inequalities for some finite volume schemes. IMA J. Numer. Anal. 35(3), 1125–1149 (2015)
Bessemoulin-Chatard, M., Chainais-Hillairet, C., Jüngel, A.: Uniform \(L^{\infty }\) estimates for approximate solutions of the bipolar drift–diffusion system. In: Finite Volumes for Complex Applications VIII, Springer Proceedings in Mathematics. Springer, Berlin (2017)
Bessemoulin-Chatard, M., Chainais-Hillairet, C., Vignal, M.-H.: Study of a finite volume scheme for the drift–diffusion system. Asymptotic behavior in the quasi-neutral limit. SIAM J. Numer. Anal. 52(4), 1666–1691 (2014)
Brezzi, F., Marini, L.D., Pietra, P.: Two-dimensional exponential fitting and applications to drift–diffusion models. SIAM J. Numer. Anal. 26(6), 1342–1355 (1989)
Chainais-Hillairet, C., Filbet, F.: Asymptotic behavior of a finite volume scheme for the transient drift–diffusion model. IMA J. Numer. Anal. 27(4), 689–716 (2007)
Chainais-Hillairet, C., Herda, M.: Large-time behavior of a family of finite volume schemes for boundary-driven convection–diffusion equations. (2018). arXiv:1810.01087
Chainais-Hillairet, C., Liu, J.-G., Peng, Y.-J.: Finite volume scheme for multi-dimensional drift–diffusion equations and convergence analysis. M2AN Math. Model. Numer. Anal. 37(2), 319–338 (2003)
Chatard, M.: Asymptotic behavior of the Scharfetter–Gummel scheme for the drift–diffusion model. In: Fořt, J., Fürst, J., Halama, J., Herbin, R., Hubert, F (eds.) Finite Volumes for Complex Applications VI Problems and Perspectives, volume 4 of Springer Proceedings in Mathematics, pp. 235–243. Springer, Berlin (2011)
Chen, Z., Cockburn, B.: Analysis of a finite element method for the drift–diffusion semiconductor device equations: the multidimensional case. Numer. Math. 71(1), 1–28 (1995)
Coughran Jr., W.M., Jerome, J.W.: Modular algorithms for transient semiconductor device simulation. I. Analysis of the outer iteration. In: Computational aspects of VLSI design with an emphasis on semiconductor device simulation (Minneapolis, MN, 1987), volume 25 of Lectures in Appl. Math., pp. 107–149. Am. Math. Soc., Providence, RI (1990)
Deimling, K.: Nonlinear Functional Analysis. Springer, Berlin (1985)
Di Francesco, M., Fellner, K., Markowich, P.A.: The entropy dissipation method for spatially inhomogeneous reaction–diffusion-type systems. Proc. R. Soc. Lond. Ser. A Math. Phys. Eng. Sci. 464(2100), 3273–3300 (2008)
Eymard, R., Gallouët, T., Herbin, R.: Finite volume methods. In: Handbook of numerical analysis, vol. VII, pp. 713–1020. North-Holland, Amsterdam (2000)
Fiebach, A., Glitzky, A., Linke, A.: Uniform global bounds for solutions of an implicit Voronoi finite volume method for reaction–diffusion problems. Numer. Math. 128, 31–72 (2014)
Filbet, F., Herda, M.: A finite volume scheme for boundary-driven convection-diffusion equations with relative entropy structure. Numer. Math. 137(3), 535–577 (2017)
Gajewski, H., Gärtner, K.: On the discretization of Van Roosbroeck’s equations with magnetic field. Z. Angew. Math. Mech. 76(5), 247–264 (1996)
Gajewski, H., Gröger, K.: On the basic equations for carrier transport in semiconductors. J. Math. Anal. Appl. 113, 12–35 (1986)
Gajewski, H., Gröger, K.: Semiconductor equations for variable mobilities based on Boltzmann statistics or Fermi-Dirac statistics. Math. Nachr. 140, 7–36 (1989)
Gajewski, H., Gröger, K.: Initial-boundary value problems modelling heterogeneous semiconductor devices. In: Surveys on Analysis, Geometry and Mathematical Physics, volume 117 of Teubner-Texte Math., pp. 4–53. Teubner, Leipzig (1990)
Gajewski, H., Gröger, K.: Reaction–diffusion processes of electrically charged species. Math. Nachr. 177, 109–130 (1996)
Gärtner, K.: Existence of bounded discrete steady-state solutions of the Van Roosbroeck system on boundary conforming delaunay grids. SIAM J. Sci. Comput. 31(2), 1347–1362 (2009)
Gilbarg, D., Trudinger, N.S.: Elliptic partial differential equations of second order, volume 224 of Grundlehren der Mathematischen Wissenschaften [Fundamental Principles of Mathematical Sciences], 2nd ed. Springer, Berlin (1983)
Il’In, A.M.: A difference scheme for a differential equation with a small parameter multiplying the highest derivative. Math. Zametki 6, 237–248 (1969)
Kowalczyk, R.: Preventing blow-up in a chemotaxis model. J. Math. Anal. Appl. 305(2), 566–588 (2005)
Lazarov, R.D., Mishev, I.D., Vassilevski, P.S.: Finite volume methods for convection–diffusion problems. SIAM J. Numer. Anal. 33(1), 31–55 (1996)
Markowich, P.A., Ringhofer, C.A., Schmeiser, C.: Semiconductor Equations. Springer, Vienna (1990)
Mock, M.S.: An initial value problem from semiconductor device theory. SIAM J. Math. Anal. 5, 597–612 (1974)
Moser, J.: A new proof of de Giorgi’s theorem concerning the regularity problem for elliptic differential equations. Commun. Pure Appl. Math. 13(3), 457–468 (1960)
Sacco, R., Saleri, F.: Mixed finite volume methods for semiconductor device simulation. Numer. Methods Partial Differ. Equ. 13(3), 215–236 (1997)
Scharfetter, D.L., Gummel, H.K.: Large signal analysis of a silicon Read diode. IEEE Trans. Electr. Dev. 16, 64–77 (1969)
Van Roosbroeck, W.: Theory of the flow of electrons and holes in germanium and other semiconductors. Bell Syst. Tech. J. 29, 560–607 (1950)
Wu, H., Jiang, J.: Global solution to the drift–diffusion–Poisson system for semiconductors with nonlinear recombination–generation rate. Asymptot. Anal. 85(1–2), 75–105 (2013)
Wu, H., Markowich, P.A., Zheng, S.: Global existence and asymptotic behavior for a semiconductor drift–diffusion–Poisson model. Math. Models Methods Appl. Sci. 18(3), 443–487 (2008)
Author information
Authors and Affiliations
Corresponding author
Additional information
Publisher's Note
Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.
Appendix: Some technical results
Appendix: Some technical results
In this Appendix, we detail some technical results which we use in the paper. There are first functional inequalities and then some properties of the numerical fluxes.
We define \(x^+=\max (x,0)\) and \(x^-=\min (x,0)\) for all \(x\in {\mathbb {R}}\). Let us first recall some elementary inequalities:
For \({{\overline{m}}}\in {\mathbb {R}}\), we can define the function \(w_{{{\overline{m}}}}\) by \(w_{{{\overline{m}}}} (x)= (\log x+{{\overline{m}}})^-\) for all \(x\in {\mathbb {R}}_+^*\). This function is widely used for the proof of the uniform-in-time positive lower bound in Sect. 3. We give in Lemma 3 some properties of the function \(w_{{\overline{m}}}\).
Lemma 3
Let \({{\overline{m}}}\in {\mathbb {R}}\), the function \(w_{{{\overline{m}}}}\) defined by \(w_{{{\overline{m}}}} (x)= -(\log x+{{\overline{m}}})^-\) for all \(x\in {\mathbb {R}}_+^*\) verifies the following inequalities:
-
For all \(q\ge 2\), for all \(x,\, y>0\),
$$\begin{aligned} -\frac{x-y}{x}\bigl (w_{{\overline{m}}}(x)\bigl )^{q-1}\ge \frac{1}{q}\Bigl (\bigl (w_{{\overline{m}}}(x)\bigl )^q-\bigl (w_{{\overline{m}}}(y)\bigl )^q\Bigl ). \end{aligned}$$(69) -
For all \(q\ge 2\), for all \(x,\, y>0\),
$$\begin{aligned} x\left( \frac{\left( w_{{\overline{m}}}(y)\right) ^{q-1}}{y}-\frac{\left( w_{{\overline{m}}}(x)\right) ^{q-1}}{x}\right)&\ge \left( w_{{\overline{m}}}(y)\right) ^{q-1}-\left( w_{{\overline{m}}}(x)\right) ^{q-1} \nonumber \\&\quad +\frac{1}{q}\left( \left( w_{{\overline{m}}}(y)\right) ^{q}-\left( w_{{\overline{m}}}(x)\right) ^{q}\right) . \end{aligned}$$(70)
Proof
We start with the proof of (69). It is trivial when \(x=y\). We consider the case where \(x\ne y\). We remark that:
Therefore,
But, on one hand the function \(w_{{\overline{m}}}\) is a nonincreasing function and on the other hand, we have:
This yields
The inequality (69) is then deduced from (68).
Let us now prove (70). We first remark that
Thus, we just need to prove:
If \(y\ge e^{-{{\overline{m}}}}\), \(w_{{\overline{m}}}(y)=0\) and the result holds for all \(x>0\). We consider now the case where \(y<e^{-{{\overline{m}}}}\). As a direct consequence of (68), we get:
But, for all \(x>0\), we have:
which yields (71) and therefore (70). \(\square \)
We now establish some properties satisfied by the numerical fluxes. Lemma 4 is crucial for the proof of Proposition 4, while Lemma 5 is used in the proof of Proposition 5.
Lemma 4
Let \(q\ge 1\). The numerical fluxes defined by (15), (16) and (17) verify that for all \(K\in {\mathcal {T}}\), for all \(\sigma \in {\mathcal {E}}_K\), for all \(n\ge 0\),
Proof
We prove only inequality (72a) since (72b) can be deduced by replacing \(D_{K,\sigma }\Psi ^{n+1}\) by \(- D_{K,\sigma }\Psi ^{n+1}\). Using the property \(B(x)-B(-x)=-x\) satisfied by the function B, we can rewrite the fluxes \({\mathcal F}_{K,\sigma }^{n+1}\) under two different forms:
With the formulation (73a), we write:
But, using (66) and (67), we get:
Moreover, B is a nonnegative function. Then, we deduce (72a) if \(D_{K,\sigma }\Psi ^{n+1}\ge 0\). The same result is obtained when \(D_{K,\sigma }\Psi ^{n+1}\le 0\) but starting with (73b) instead of (73a). \(\square \)
Lemma 5
Let \(q\ge 2\). Let \({{\overline{m}}}\in {\mathbb {R}}\), we set \(w_K^{n+1}=w_{{{\overline{m}}}}(N_K^{n+1})\) for all \(K\in {\mathcal {T}}\), for all \(n\ge 0\). The numerical fluxes defined by (15) and (17) verify that for all \(K\in {\mathcal {T}}\), for all \(\sigma \in {\mathcal {E}}_K\), for all \(n\ge 0\),
Proof
We first assume that \(D_{K,\sigma }\Psi ^{n+1}\ge 0\). Using formulation (73a), we write
with
We treat \(R_{1}\) following the same computations as those used in [17, proof of Theorem 4] for the diffusion term. More precisely, we have
with
According to [17, Lemma 7], we can rewrite \(R_{11}\) and \(R_{12}\) respectively as:
with
Moreover, using the definition of \(w_{{\mathcal {T}}}^{n+1}\) and (67) with \(\alpha =1\) and \(\beta =q-1\), we have:
Then we get
We also have
and since for all \(x,\,y\ge 0\) we have, as shown in [17, Lemma 6],
which yields
Gathering (75) and (76), we finally deduce that
The term \(R_{2}\) is now treated using (70) from Lemma 3 with \(x=N_K^{n+1}\) and \(y=N_{K,\sigma }^{n+1}\) (we still assume that \(D_{K,\sigma }\Psi ^{n+1}\ge 0\)). We get:
Gathering (77) and (78) yields the result if \(D_{K,\sigma }\Psi ^{n+1}\ge 0\). The case \(D_{K,\sigma }\Psi ^{n+1}\le 0\) can be treated exactly in the same way, starting from the expression (73b) of the flux instead of (73a). \(\square \)
Rights and permissions
About this article
Cite this article
Bessemoulin-Chatard, M., Chainais-Hillairet, C. Uniform-in-time bounds for approximate solutions of the drift–diffusion system. Numer. Math. 141, 881–916 (2019). https://doi.org/10.1007/s00211-018-01019-1
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00211-018-01019-1