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Characterization analysis of 355 nm pulsed laser cutting of 6H-SiC

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Abstract

In this study, a 355-nm pulsed laser was used to cut 350-μm-thick silicon carbide wafers. The surface morphology and changes in the elemental composition and structure of the cutting line after processing were analyzed using lasers with various laser power, pulse repetition frequency, scanning speed, and scanning repetition settings; they were also compared with those observed for a test piece made using a diamond wheel. An average laser power of 6 W, pulse repetition frequency of 60 kHz, and scanning speed of 5 mm/s minimized oxidation and achieved a groove width of 18.6 μm—15.1 μm narrower than the diamond-cut groove. X-ray photoelectron spectroscopy revealed that the heat-affected zone and the oxygen content of the surface recast layer increased when the laser energy and number of repetitions increased or when the scanning speed decreased. Oxygen content increased from 15.93% (diamond cutting) to up to 47.81%.

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Acknowledgements

The authors would like to thank the Taiwan Instrument Research Institute (TIRI) Ms. Nancy Chu for supporting the use of high-resolution FE-SEM (Hitachi S-4300). The Taiwan semiconductor Research Institute (TSRI) for XPS analysis. The Southern Taiwan University of Science and Technology (STUST) for supporting the UV-vis-NIR spectrometer, and of scanning electron microscope from Department of Materials and Mineral Resources Engineering, National Taipei University of Technology (NTUT).

Funding

This work was financially supported by the National Science and Technology Council (NSTC) of Taiwan, with project numbers: 110–2622-E-492–016 and 111–2221-E-492–009.

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Authors and Affiliations

  1. Department of Mechanical Engineering, National Taipei University of Technology, Taipei, 106, Taiwan

    Shih-Feng Tseng & Cheng-Xing Luo

  2. Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, 300, Taiwan

    Wen-Tse Hsiao

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  1. Shih-Feng Tseng
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Contributions

W.T.: conceptualization, validation, investigation, methodology, formal analysis. C.X.: validation, investigation, analysis. S.F.: formal analysis, investigation, validation. S.F. and W.T.: advisor, conceptualization, validation, investigation, writing—original draft. W.T. and S.F.: advisor, resources, validation, investigation, writing—original draft. W.T.: methodology, supervision, validation, writing—original draft.

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Correspondence to Wen-Tse Hsiao.

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Tseng, SF., Luo, CX. & Hsiao, WT. Characterization analysis of 355 nm pulsed laser cutting of 6H-SiC. Int J Adv Manuf Technol 130, 3133–3147 (2024). https://doi.org/10.1007/s00170-023-12802-2

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