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Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches

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Abstract

Nanocutting mechanism of single crystal 6H-SiC is investigated through a novel scanning electron microscope setup in this paper. Various undeformed chip thicknesses on (0001) < 1–100 > orientation are adopted in the nanocutting experiments. Phase transformation and dislocation activities involved in the 6H-SiC nanocutting process are also characterized and analyzed. Two methods of stress-assisted and ion implant-assisted nanocutting are studied to improve 6H-SiC ductile machining ability. Results show that stress-assisted method can effectively decrease the hydrostatic stress and help to activate dislocation motion and ductile machining; ion implant-induced damages are helpful to improve the ductile machining ability from MD simulation and continuous nanocutting experiments under the online observation platform.

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Abbreviations

SiC:

silicon carbide

SEM:

scanning electron microscope

EBSD:

electron backscatter diffraction

FIB:

focused ion beam

ABOP:

analytical bond order potential

DXA:

dislocation extraction algorithm

SRIM:

Stopping and Range of Ions in Matter

MD:

molecular dynamics

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Acknowledgements

The authors thank Dr. B. Liu, Dr. H.S. Jiao, and Prof. C. Wang for valuable discussions.

Funding

The study is supported by the National Natural Science Foundation of China (No. 51575389, 51761135106), National Key Research and Development Program of China (2016YFB1102203), State Key Laboratory of Precision Measuring Technology and Instruments (Pilt1705), and the “111” Project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014).

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Authors and Affiliations

  1. State Key Laboratory of Precision Measuring Technology & Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin, China

    Zongwei Xu, Lei Liu, Zhongdu He, Dongyu Tian, Guoxiong Zhang & Fengzhou Fang

  2. Interdisciplinary Centre for Advanced Materials Simulation (ICAMS), Ruhr-University Bochum, Bochum, Germany

    Alexander Hartmaier

  3. Center for Precision Engineering, Harbin Institute of Technology, Harbin, China

    Junjie Zhang

  4. Centre for Precision Manufacturing, Department of Design, Manufacture & Engineering Management, University of Strathclyde, Glasgow, UK

    Xichun Luo

  5. Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Erlangen, Germany

    Mathias Rommel

  6. Department of Physics, Helsinki Institute of Physics POB 43, University of Helsinki, Helsinki, Finland

    Kai Nordlund

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  1. Zongwei Xu
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  2. Lei Liu
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  11. Fengzhou Fang
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Correspondence to Zongwei Xu.

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Xu, Z., Liu, L., He, Z. et al. Nanocutting mechanism of 6H-SiC investigated by scanning electron microscope online observation and stress-assisted and ion implant-assisted approaches. Int J Adv Manuf Technol 106, 3869–3880 (2020). https://doi.org/10.1007/s00170-019-04886-6

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  • DOI: https://doi.org/10.1007/s00170-019-04886-6

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