Abstract
This paper presents a new nine-transistor (9T) SRAM cell operating in the subthreshold region. In the proposed 9T SRAM cell, a suitable read operation is provided by suppressing the drain-induced barrier lowering effect and controlling the body–source voltage dynamically. Proper usage of low-threshold voltage (L-\(V_{\mathrm{t}}\)) transistors in the proposed design helps to reduce the read access time and enhance the reliability in the subthreshold region. In the proposed cell, a common bit-line is used in the read and write operations. This design leads to a larger write margin without using extra circuits. The simulation results at 90 nm CMOS technology demonstrate a qualified performance of the proposed SRAM cell in terms of power dissipation, power–delay product, write margin, read access time and sensitivity to process, voltage and temperature variations as compared to the other most efficient low-voltage SRAM cells previously presented in the literature.
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Moghaddam, M., Timarchi, S., Moaiyeri, M.H. et al. An Ultra-Low-Power 9T SRAM Cell Based on Threshold Voltage Techniques. Circuits Syst Signal Process 35, 1437–1455 (2016). https://doi.org/10.1007/s00034-015-0119-0
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DOI: https://doi.org/10.1007/s00034-015-0119-0