Abstract
In this work, we have designed a conventional perovskite solar cell (PSC) with the structure “FTO/TiO2/CH3NH3PbI3/Spiro-OmeTAD/Au” using general-purpose photovoltaic device model (OghmaNano). With this primary design, 13.88% power conversion efficiency (PCE) has been obtained. In order to enhance the performance of this device, the thicknesses of each layer and the doping concentrations of transport layers (ETL and HTL) are optimized with respect to the characteristic parameters of the solar cell, namely the open-circuit voltage (VOC), short circuit current density (JSC), and fill factor (FF). The optimized thickness of active/perovskite layer, electron and hole transport layers (ETL and HTL), and cathode are obtained as 240, 20, 100, and 20 nm, respectively. The optimized value of dopant concentrations for HTL and ETL is obtained as 2 × 1025 and 4 × 1025 m−3, respectively. Furthermore, the effect of carrier recombination on the performance of the device has also been studied. We have achieved 24.18% of PCE with the optimized design of this conventional structure.
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Amir, M., Singh, M.P., Masood, I. (2023). Recombination Analysis of CH3NH3PbI3 Perovskite Solar Cell for Optimized Device Structure. In: Khan, Z.H., Jackson, M., Salah, N.A. (eds) Recent Advances in Nanotechnology. ICNOC 2022. Springer Proceedings in Materials, vol 28. Springer, Singapore. https://doi.org/10.1007/978-981-99-4685-3_66
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DOI: https://doi.org/10.1007/978-981-99-4685-3_66
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