Abstract
In recent years, silicon photonics has attracted a lot of attention. On the other hand, pulse reshaping has been a fascinating research subject in recent years. In this paper, we describe a silicon-on-insulator (SOI) waveguide that has been precisely designed for pulse reshaping to generate a triangular pulse (TP). By matching the v-parameters in the x- and y-direction, we were able to create a rectangular buried SOI waveguide. The effective index method was used to calculate group velocity dispersion, and the modal distribution and effective area were used to calculate nonlinearity. Even though two-photon absorption and free-carrier generation contribute significantly to lose parameters, the highly nonlinear waveguide is shown to be capable of reshaping the Super-Gaussian pulse input into a triangular pulse shape. In addition, the input chirp, pulse width, and peak power values are also important for the formation of a high-quality triangular pulse. When compared to our result for the optical fibers, the required length is less for the triangular pulse reshaping. Our waveguide has potential in pulse generation, signal processing, and many other fields.
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Hemant, Adhikary, S., Basu, M. (2023). Designing a Silicon-on-Insulator (SOI) Waveguide with an Aim of Studying Nonlinear Pulse Reshaping. In: Giri, C., Iizuka, T., Rahaman, H., Bhattacharya, B.B. (eds) Emerging Electronic Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 1004. Springer, Singapore. https://doi.org/10.1007/978-981-99-0055-8_32
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DOI: https://doi.org/10.1007/978-981-99-0055-8_32
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