Abstract
This paper presents a fully-integrated dual-band concurrent CMOS low noise amplifier (LNA) which is implemented in Global Foundries 0.13 um RF CMOS technology. The LNA is designed to receive signals at 2.45 and 5.25 GHz frequency bands simultaneously. The concurrent operation of the proposed LNA makes it suitable for WLAN (802.11 b/g/a) applications. Based on post layout simulation results, this design achieved the power gain of 16 dB at 2.45 GHz and 11.7 dB at 5.25 GHz, the NF of 3 dB at 2.45 GHz and 4.3 dB at 5.25 GHz and the input and output return loss of −14 dB at the desired frequencies. Total power consumption of this design is only 6.5 mW.
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References
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Acknowledgments
Authors would like to thank Collaborative Microelectronic Design Excellence Centre (CEDEC) for supporting Cadence EDA tools software. Special acknowledgement to Universiti Sains Malaysia, short term research grant no. 304/PELECT/60311021 and the research university (RU) grant no. 1001/PELECT/814107 for the funding of this work.
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Ameri Eshghabadi , H., Mustaffa, M.T., Mohd Noh , N., Abd Manaf, A., Sidek, O. (2014). A Fully-Integrated Dual-Band Concurrent CMOS LNA for 2.45/5.25 GHz Applications. In: Mat Sakim, H., Mustaffa, M. (eds) The 8th International Conference on Robotic, Vision, Signal Processing & Power Applications. Lecture Notes in Electrical Engineering, vol 291. Springer, Singapore. https://doi.org/10.1007/978-981-4585-42-2_47
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DOI: https://doi.org/10.1007/978-981-4585-42-2_47
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