Abstract
In the current paper, we analyze the electrical characteristics of single-gate fully depleted SOI MOSFET. This paper was focused on following electrical characteristics that are threshold voltage and subthreshold voltage. The performance of the device is analyzed for the 400 nm gate length. The device is also modeled for threshold voltage and subthreshold voltage. The device characterization of proposed device is taken in account by making other device parameter constants—short channel effect, substrate current, heating effect, doping effect, kink effect of single-gate FDSOI MOSFET. The device structure and characteristics were constructed examined and simulated using Silvaco Atlas.
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Shakher Tyagi, C., Sharma, R.L., Mani, P. (2021). Analysis of Threshold Voltage and Subthreshold Behaviour for 400 NM Gate of Ultrathin Nanoscale FD SOI MOSFET. In: Mahapatra, R.P., Panigrahi, B.K., Kaushik, B.K., Roy, S. (eds) Proceedings of 6th International Conference on Recent Trends in Computing. Lecture Notes in Networks and Systems, vol 177. Springer, Singapore. https://doi.org/10.1007/978-981-33-4501-0_76
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DOI: https://doi.org/10.1007/978-981-33-4501-0_76
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