Abstract
A bottom-gate top-contact OPT based on Pentance/SnNc/C60 planar heterojuction was fabricated. The device was characterized at different ambient temperature (Ta) (−40 ~ 110 °C). The dependence of drain current, threshold voltage and field-effect mobi0.lity both in the dark and under illumination on the ambient temperature were revealed. As rising Ta, the drain current increase, and the value of the field-effect mobility (μ) increase first, and then tend to saturate. We suggest that the performance dependence on ambient temperature can be attributed to thermally activated small polaron hopping which facilitate the carrier transport in the enlarged film grains.
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Acknowledgements
This work was supported by the Zhejiang Provincial Natural Science Foundation of China Grant No. LQ19F040003.
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Lu, C., Lv, W., Xu, S. (2021). Effects of Temperature on the Performance of Pentcene/SnNc/C60 Planar Heterojunction Based Organic Phototransistors. In: Peng, Y., Dong, X. (eds) Proceedings of 2019 International Conference on Optoelectronics and Measurement. Lecture Notes in Electrical Engineering, vol 726. Springer, Singapore. https://doi.org/10.1007/978-981-33-4110-4_2
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DOI: https://doi.org/10.1007/978-981-33-4110-4_2
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