Abstract
This work was aimed to develop chemoresistive base sensor on silicon platform. Carbon nanotube (CNT) with low density was grown on passive interdigitated (IDE) based sensor which later can be functionalized with other material for the selectivity of the targeted goals. Low dense CNT will provide a bigger area of the functionalities element adhered to the wall hence increase the sensitivity of the sensor. In situ CNT growth was achieved using a PECVD machine with the time parameter was varied targeting for low dense CNT grow in-between the IDE fingers. SEM analysis reveals that low dense CNT was evidence for growth time as short as 30 s and as the time increase, the density was also increasing. Resistive probing of the grown CNT samples shows a drop in resistance compared to non-grown CNT which confirmed that the CNT successfully conducting the electron. CO2 gas testing shows that the low dense sensor shows better detection performance compared to high dense sensor. However, further study needs to be conducted to measure the level of amorphous carbon which determine the purity of the such CNT nanostructure.
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Acknowledgments
The authors wish to thank MIMOS Berhad for facility accessibility to perform this experiment, Universiti Teknologi MARA (UiTM) and Ministry of Higher Education Malaysia (MOHE) for the financial support under the Exploratory Research Grant Scheme (File No: 600-RMI/ERGS5/3(18/2013)).
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Rashid, A.A. et al. (2015). Low Dense CNT for Ultra-Sensitive Chemoresistive Gas Sensor Development. In: Hassan, R., Yusoff, M., Alisibramulisi, A., Mohd Amin, N., Ismail, Z. (eds) InCIEC 2014. Springer, Singapore. https://doi.org/10.1007/978-981-287-290-6_75
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DOI: https://doi.org/10.1007/978-981-287-290-6_75
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