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Improved Conversion Gain with High SFDR and Highly Linear RF Mixer Using Inductive Gate Biasing Technique for Low Power WAS and Radio LAN Applications

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Advances in Signal Processing, Embedded Systems and IoT

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 992))

Abstract

Wireless access systems (WASs) are ubiquitous, fulfilling various technological needs in our day to day life. In order to meet the latest requirements in terms of power, size and cost, they impose very stringent specifications w.r.t. the performance of various subsystems in them. Inductive gate biasing technique (IGBT) is proposed for performance enhancement of active mixer, a subsystem of RF front end of any superheterodyne receiver, to cater the need of low power WAS including Radio LAN (RLAN) applications. It features a double balanced down conversion mixer topology with inductive source degeneration and active loads along with single ended to differential converters (SE2DCs) for both RF and LO inputs of the mixer. Post layout simulation (PLS) results account for a conversion gain (CG) of 13.62, 93.58 dB spurious free dynamic range (SFDR), 39.10 dBm third order input intercept point (IIP3) and a single side band-noise figure (SSB-NF) of 12.09 dB at 3.49 mW of D.C power consumption in 180 nm CMOS technology with 1.8 V supply voltage for 5.15 GHz RF and 100 MHz IF.

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Authors and Affiliations

  1. Department of ECE, SVU College of Engineering, Sri Venkateswara University, Tirupati, Andhra Pradesh, India

    Avvaru Subramanyam & R. V. S. Satyanarayana

Authors
  1. Avvaru Subramanyam
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  2. R. V. S. Satyanarayana
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Corresponding author

Correspondence to Avvaru Subramanyam .

Editor information

Editors and Affiliations

  1. Department of Electronics and Communication Engineering, Raghu Institute of Technology, Visakhapatnam, India

    V.V.S.S.S. Chakravarthy

  2. Department of Electronics Engineering, Faculty of Engineering and Technology, Veer Bahadur Singh Purvanchal University, Jaunpur, Uttar Pradesh, India

    Vikrant Bhateja

  3. Autonomous University of Baja California, Mexicali, Baja California, Mexico

    Wendy Flores Fuentes

  4. Department of Electronics and Telecommunication, Universitat Ramon Llull, Barcelona, Spain

    Jaume Anguera

  5. Shri Vishnu Engineering College for Women (A), Bhimavaram, Andhra Pradesh, India

    K. Padma Vasavi

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Subramanyam, A., Satyanarayana, R.V.S. (2023). Improved Conversion Gain with High SFDR and Highly Linear RF Mixer Using Inductive Gate Biasing Technique for Low Power WAS and Radio LAN Applications. In: Chakravarthy, V., Bhateja, V., Flores Fuentes, W., Anguera, J., Vasavi, K.P. (eds) Advances in Signal Processing, Embedded Systems and IoT . Lecture Notes in Electrical Engineering, vol 992. Springer, Singapore. https://doi.org/10.1007/978-981-19-8865-3_4

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  • DOI: https://doi.org/10.1007/978-981-19-8865-3_4

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-19-8864-6

  • Online ISBN: 978-981-19-8865-3

  • eBook Packages: EngineeringEngineering (R0)

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