Abstract
Memories, which act as data storage devices, are crucial to computer systems. These are extensively used in application-specific integrated circuits and in other microprocessor-based systems where millions of transistors are integrated on a single chip. Since the memories generally account for a large portion of the chip area, these components suffer more space radiation than others. The sensitivity to radiation of semiconductor memories has become a critical issue to ensure the reliability of electronic systems. Recently, memristor emerges as a newly fabricated device that is becoming popular among researchers for its immune to radiation, non-volatility, and good switching behavior. However, research on soft error tolerance in memristor-based memories is still negligible. This paper presents a new method to tolerate soft errors in memristor-based memory. The proposed method can correct single, and double-bit soft errors with lesser information overhead concerning existing techniques.
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Acknowledgements
We, the authors, are grateful to the Institute of Information and Communication (IICT), Bangladesh University of Engineering and Technology (BUET) for providing all possible support to perform this research.
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Sadi, M.S., Sumon, M.M.H., Ali, M.L. (2023). Soft Error Tolerant Memristor-Based Memory. In: Ahmad, M., Uddin, M.S., Jang, Y.M. (eds) Proceedings of International Conference on Information and Communication Technology for Development. Studies in Autonomic, Data-driven and Industrial Computing. Springer, Singapore. https://doi.org/10.1007/978-981-19-7528-8_33
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DOI: https://doi.org/10.1007/978-981-19-7528-8_33
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