Abstract
In this work, we study the impact of hydrostatic pressure and temperature a multi-quantum wells (MQWs) perturbed by a barrier defect. Our study is based on the Green function method, which allows us to determine the physical properties of ZnO/Zn1−xMgxO multi-quantum wells. The insertion of defects inside the MQWs produces localized electronic states, also called defect states which are sensitive the hydrostatic pressure and temperature. Firstly, we perturb the MQWs with a material defect where the concentration of the defect layer equals 0.15. Then we perturbed the MQWs by a geometrical defect with a thickness equal to 55 A°. Finally, we perturbed our system by a geo-material defect with a concentration and thickness equal to 0.15 and 60 A°. We found that for the case of a material and geo-material defect, the average variation of the central energy of the defect state with the hydrostatic pressure and the temperature is higher than that of a geometric defect.
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Baidri, A., Elamri, F.Z., Falyouni, F., Ben-Ali, Y., Bria, D. (2023). Theoretical Study of the Sensitivity of the Localized Electronic States Induced by the Presence of Defects in a ZnO/Zn1−xMgxO MQWs Under Hydrostatic Pressure and Temperature. In: Bekkay, H., Mellit, A., Gagliano, A., Rabhi, A., Amine Koulali, M. (eds) Proceedings of the 3rd International Conference on Electronic Engineering and Renewable Energy Systems. ICEERE 2022. Lecture Notes in Electrical Engineering, vol 954. Springer, Singapore. https://doi.org/10.1007/978-981-19-6223-3_26
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DOI: https://doi.org/10.1007/978-981-19-6223-3_26
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