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Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design

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HEMT Technology and Applications

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Abstract

In this work, the different figures-of-merit for AlN/β-Ga2O3 High Electron Mobility Transistor (HEMT) are computed using TCAD. The first and second-order derivatives of transconductance, output-conductance (gd), intrinsic-gain (dB), gate-source capacitance (Cgs), gate-drain capacitance (Cgd), transconductance-generation factor (TGF), transconductance-frequency product (TFP), 1-dB compression-point, extrapolated input voltages (VIP2 and VIP3), third-order input intercept point (IIP3), third-order intermodulation distortion (IMD3), and gain-transconductance frequency product (GTFP) are computed to predict the linearity performance and minimize intermodulation distortion. The present analysis is beneficial for optimizing the device bias point required for RFIC design.

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Authors and Affiliations

  1. School of Electronics and Electrical Engineering, Lovely Professional University, Jalandhar, Punjab, 144411, India

    Yogesh Kumar Verma

  2. Department of Electronics and Electrical Engineering, Graphic Era (Deemed to be University), Dehradun, Uttarakhand, 248002, India

    Varun Mishra

  3. Microelectronics and VLSI Design Group, Department of Electronics and Communication Engineering, National Institute of Technology Silchar, Silchar, Assam, 788010, India

    Rajan Singh & Trupti Ranjan Lenka

  4. Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, 211004, India

    Santosh Kumar Gupta

Authors
  1. Yogesh Kumar Verma
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  2. Varun Mishra
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  3. Rajan Singh
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  4. Trupti Ranjan Lenka
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  5. Santosh Kumar Gupta
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Correspondence to Yogesh Kumar Verma .

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Editors and Affiliations

  1. Department of Electronics and Communication Engineering, National Institute Of Technology Silchar, Silchar, Assam, India

    Trupti Ranjan Lenka

  2. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, USA

    Hieu Pham Trung Nguyen

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Verma, Y.K., Mishra, V., Singh, R., Lenka, T.R., Gupta, S.K. (2023). Linearity Analysis of AlN/β-Ga2O3 HEMT for RFIC Design. In: Lenka, T.R., Nguyen, H.P.T. (eds) HEMT Technology and Applications. Springer Tracts in Electrical and Electronics Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-19-2165-0_15

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  • DOI: https://doi.org/10.1007/978-981-19-2165-0_15

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-19-2164-3

  • Online ISBN: 978-981-19-2165-0

  • eBook Packages: EngineeringEngineering (R0)

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