Abstract
Wire-bond insulated gate bipolar transistor IGBT modules (WB-IGBT) are widely used in new energy power generation, rail transit and other fields. WB-IGBT are the core power modules of power electronic equipment, and their reliability is important for the safe operation of the system. Package failure is one of the main failure modes of WB-IGBT. Package condition monitoring is the key to realize module fault diagnosis, condition prediction and intelligent operation and maintenance. In this paper, aiming at the problem of package condition monitoring of WB-IGBT. Firstly, the package structure of WB-IGBT is analyzed, and the failure locations of WB-IGBT are studied; Secondly, aiming at two main package failure modes of WB-IGBT, including the bond wire failure and solder layer failure, the package condition monitoring methods for different failure modes are analyzed. Finally, the problems of the existing monitoring methods are analyzed, and new methods which can be used to monitor package condition of WB-IGBT are studied. The results provide new research ideas for the package condition monitoring of WB-IGBT.
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Acknowledgment
This work was supported by the National Natural Science Foundation of China State Grid Corporation Joint Fund for Smart Grid (Grant No. U1966213), and Graduate Research and Innovation Foundation of Chongqing, China (Grant No. CYB21015).
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Liu, R., Li, H., Yao, R., Wang, X., Lai, W., Tan, H. (2022). Analysis on the Package Failure Modes and Condition Monitoring Methods of Wire-Bond IGBT. In: He, J., Li, Y., Yang, Q., Liang, X. (eds) The proceedings of the 16th Annual Conference of China Electrotechnical Society. Lecture Notes in Electrical Engineering, vol 891. Springer, Singapore. https://doi.org/10.1007/978-981-19-1532-1_138
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