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Resistive Random Access Memory: Materials, Filament Mechanism, Performance Parameters and Application

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Flexible Electronics for Electric Vehicles

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 863))

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Abstract

Till today, we are using conventional technologies for memory-related applications. However, as the size of the electronic devices are shrinking day by day, such conventional memory devices will not be compatible with emerging applications like artificial intelligence, cloud storage, data mining, Internet of Things, etc. After the coronavirus outburst, these technologies are more needed as now all work is online. Henceforth, high data storage and fast information processing is one of the vital requirements which is to be researched. So, the researchers are now approaching the new memory technologies such as resistive random access memory (RRAM) which is superior than conventional memory devices in terms of scalability, speed, power consumption, design structure and many more other advantages. With all the pros, RRAM also has some cons like higher level of variability and reliability issues. So, to discuss all these issues, we present the basics of RRAM, their advantages, applications and technological trends in this manuscript.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Manipal University Jaipur, Jaipur, Rajasthan, 303007, India

    Neeraj Jain

  2. Department of Electronics and Communication Engineering, Swami Keshvanand Institute of Technology, Management & Gramothan, Jaipur, Rajasthan, 302017, India

    Neeraj Jain

  3. Department of Computer and Communication Engineering, Manipal University Jaipur, Jaipur, Rajasthan, 303007, India

    Renu Kumawat

  4. Department of Electronics and Communication Engineering, Indian Institute of Information Technology, Ranchi, Jharkhand, 834010, India

    Shashi Kant Sharma

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  1. Neeraj Jain
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  2. Renu Kumawat
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Corresponding author

Correspondence to Renu Kumawat .

Editor information

Editors and Affiliations

  1. Application Control, Danfoss Power Electronics A/S Denmark, Nordborg, Denmark

    Sanjeet Dwivedi

  2. Electrical Engineering, Maulana Azad National Institute of Techn, Bhopal, Madhya Pradesh, India

    Sanjeev Singh

  3. Electronics and Communication Engg., Manipal University Jaipur, Jaipur, India

    Manish Tiwari

  4. Skill Faculty of Engineering and Technology, Shri Vishwakarma Skill University Haryana, Gurugram, India

    Ashish Shrivastava

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Jain, N., Kumawat, R., Sharma, S.K. (2023). Resistive Random Access Memory: Materials, Filament Mechanism, Performance Parameters and Application. In: Dwivedi, S., Singh, S., Tiwari, M., Shrivastava, A. (eds) Flexible Electronics for Electric Vehicles. Lecture Notes in Electrical Engineering, vol 863. Springer, Singapore. https://doi.org/10.1007/978-981-19-0588-9_3

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  • DOI: https://doi.org/10.1007/978-981-19-0588-9_3

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-19-0587-2

  • Online ISBN: 978-981-19-0588-9

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