Abstract
The implements of high-voltage GaN power transistors in Inductive Coupled Power Transfer (ICPT) circuit can not only reduce switching losses and conduction losses, but also reduce the dimension of whole circuit with higher efficiency. Firstly, a design process of ICPT circuit is described in this paper, e.g., a typical circuit topology of an SS-compensated ICPT circuit and lectotype of GaN power transistor. Then, a Zero Voltage Switch (ZVS) achieving method and power losses analyze are made. Further, simulations are performed via LTspice to prove the reliability of the process. Finally, efficiency of ICPT circuit with Si MOSFET is compared with that using GaN High Electron Mobility Transistor (HEMT). As a result, under the same input voltage, resonant capacitors, resonant inductors and load, the efficiency of ICPT circuit with GaN HEMT reaches 92.05%, which is 0.26% higher than that of ICPT circuit using Si MOSFET.
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Yuan, Q., Mei, W., Li, W., Zhou, Y., Lin, W., Diao, L. (2022). A High-Voltage GaN-Based Inductive Coupled Power Transfer Circuit. In: Liang, J., Jia, L., Qin, Y., Liu, Z., Diao, L., An, M. (eds) Proceedings of the 5th International Conference on Electrical Engineering and Information Technologies for Rail Transportation (EITRT) 2021. EITRT 2021. Lecture Notes in Electrical Engineering, vol 867. Springer, Singapore. https://doi.org/10.1007/978-981-16-9909-2_68
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DOI: https://doi.org/10.1007/978-981-16-9909-2_68
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