Abstract
Tunnel field effect transistors are emerging as future energy-competent devices due to their use in low power applications. An evolving application area for tunnel FETs is in the field of biomedical sciences. With the advancements in the biomedical field of research, it has become essential to develop robust, highly sensitive, fast, and economical biosensors for high precision and point-of-care applications. This work presents a surrounding gate tunnel FET using III-V materials for label and label-free detection. The sensing metric used in this work is the transconductance-to-current ratio in the device. The biosensor is simulated for biomolecules with different dielectric constants and positive and negative charges.
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Vijh, M., Singh, A., Pandey, S. (2022). Energy-Efficient Tunnel FET for Application as a Biosensor. In: Jain, V.K., Gomes, C., Verma, A. (eds) Renewable Energy and Storage Devices for Sustainable Development. Springer Proceedings in Energy. Springer, Singapore. https://doi.org/10.1007/978-981-16-9280-2_22
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DOI: https://doi.org/10.1007/978-981-16-9280-2_22
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