Skip to main content

Design and Analysis of Asymmetric Cantilever Type Shunt Switch for L Band Applications

  • Conference paper
  • First Online:
Advanced Energy and Control Systems

Abstract

This work exhibits the design and simulations of an Asymmetric cantilever type RF-MEMS switch with uniform and non-uniform meanders. The Electromechanical and Electromagnetic analysis are performed through the COMSOL multi-physics and HFSS software. Here, the paper aims to maintain the low actuation voltage and enhance the isolation of the switch. The single and non-uniform meanders type of switches shows good results. By comparing two switches, the non-uniform meander type switch shows better performance. The dielectric material is an important factor for getting good capacitance. The switch capacitance in the upper and lower states is 5.42 fF, 8.26 fF, and 3.68 pF, 6.43 pF. The switching time analysis of the switch is obtained as 3 µs 9 µs. The beam materials also impact to reduce the pull-in voltage, and the obtained voltages are 6.3 V and 4.3 V. The switches have good S-parameters, such as return and insertion losses of −36.24 dB, −48. 69 dB and −0.032 dB, −0.051 dB. The isolation has raised both switches as −40.473 dB and −46.182 dB at 1 to 5 GHz frequency range. So, the device becomes a low-frequency range L band, for military and radar applications.

This is a preview of subscription content, log in via an institution to check access.

Access this chapter

Chapter
USD 29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD 189.00
Price excludes VAT (USA)
  • Available as EPUB and PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD 249.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info
Hardcover Book
USD 249.99
Price excludes VAT (USA)
  • Durable hardcover edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Institutional subscriptions

References

  1. C.L. Goldsmith, Z. Yao, S. Eshelman, D Denniston, Performance of low-loss RF MEMS capacitive switches. IEEE Microw Guided Wave Lett. 8(8), 269–271 (1998)

    Google Scholar 

  2. G.M. Rebeiz, RF MEMS: Theory, Design, and Technology (John Wiley & Sons, 2004)

    Google Scholar 

  3. D.R. Shah, R. Sharma, H.K. Varshney, S. Parveen, A. Akhtar, Study of RF-MEMS capacitive shunt switch for microwave backhaul applications. J. Electron. Commun. Eng. 12(1), 57–65 (2017)

    Google Scholar 

  4. P.A. Kumar, K. Girija Sravani, B.V.S. Sailaja, K.V. Vineetha, K. Guha, K. Srinivasa Rao, Performance analysis of series: shunt configuration based RF MEMS switch for satellite communication applications. Microsyst. Technol. 24(12), 4909–4920 (2018)

    Google Scholar 

  5. C.-H. Chu, W.-P. Shih, S.-Y. Chung, H.-C. Tsai, T.-K. Shing, P.-Z. Chang, A low actuation voltage electrostatic actuator for RF MEMS switch applications. J. Micromech. Microeng. 17(8), 1649 (2007)

    Article  Google Scholar 

  6. L. Muhua, J. Zhao, Z. You, G. Zhao, Design and experimental validation of a restoring force enhanced RF MEMS capacitive switch with Stiction-recovery electrodes. Microsyst. Technol. 23(8), 3091_3096 (2017)

    Google Scholar 

  7. T. Singh, N. Khaira, High isolation single-pole four-throw RF MEMS switch based on series-shunt configuration. Sci. World J. (2014)

    Google Scholar 

  8. K.S. Rao, P.S. Mounika, P. Pavan, V. Guru, N. Dinesh, P. Ashok Kumar, K. Vineetha, K. Girija Sravani, Design, simulation and analysis of RF-MEMS shunt capacitive switch for 5G application. Microsyst. Technol. 25(11), 4197–4208 (2019)

    Google Scholar 

  9. J. Sam, J. Kumar, E.A. Tetteh, E.P. Braineard, A study of why electrostatic actuation is preferred and a simulation of an electrostatically actuated cantilever beam for mems applications (2014)

    Google Scholar 

  10. Y. Mafinejad, A. Kouzani, Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage. Int. J. Adv. Manuf. Technol. (2017)

    Google Scholar 

  11. Y.-W. Yu, J. Zhu, S.-X. Jia, Yi. Shi, A high isolation series-shunt RF MEMS switch. Sensors 9(6), 4455–4464 (2009)

    Article  Google Scholar 

  12. M. Angira, K. Rangra, Performance improvement of RF-MEMS capacitive switch via asymmetric structure design. Microsyst. Technol. 21(7), 1447–1452 (2015)

    Article  Google Scholar 

  13. W.-B. Zheng, Q.-A. Huang, X.-P. Liao, F.-X. Li, RF MEMS membrane switches on GaAs substrates for X-band applications. J. Microelectromech. Syst. 14(3), 464–471 (2005)

    Article  Google Scholar 

  14. E.A. Savin, K.A. Chadin, R.V. Kirtaev, Design and manufacturing of X-band RF MEMS switches. Microsyst. Technol. 24(6), 2783–2788 (2018)

    Article  Google Scholar 

  15. A. Ziaei, S. Bansropun, P. Martins, M. Le Baillif, Fast high power capacitive RF-MEMS switch for X-Band applications.“ In 2015 45th European Solid State Device Research Conference (ESSDERC), (IEEE) pp. 153–155 (2015)

    Google Scholar 

  16. A.K. Ravirala, L.K. Bethapudi, J. Kommareddy, B.S. Thommandru, S. Jasti, P.R. Gorantla, A. Puli, G.S. Karumuri, S.R. Karumuri, Design and performance analysis of uniform meander structured RF MEMS capacitive shunt switch along with perforations. Microsys. Technol. 24(2), 901–908 (2018)

    Google Scholar 

  17. T. Lakshmi Narayana, K. Girija Sravani, K. Srinivasa Rao, A micro level electrostatically actuated cantilever and metal contact based series RF MEMS switch for multi-band applications. Cogent Eng. 4(1), 1323367 (2017)

    Google Scholar 

  18. K. Girija Sravani, G. Sudheer Babu, M. Ramesh, V. Prudhvi Raj, D. Prathyusha, K. Srinivasa Rao, Beam and dielectric materials impact on improvement of the performance of a novel capacitive shunt RF MEMS switch. Int. J. Numer. Model. Electron. Netw. Dev. Fields 32(5), e2598 (2019)

    Google Scholar 

  19. K.S. Rao, C. Gopi Chand, K. Girija Sravani, D. Prathyusha, P. Naveena, G. Sai Lakshmi, P. Ashok Kumar, T. Lakshmi Narayana, Design, modeling and analysis of perforated RF MEMS capacitive shunt switch. IEEE Access 7, 74869–74878 (2019)

    Google Scholar 

  20. K.G. Sravani, D. Prathyusha, K. Srinivasa Rao, P. Ashok Kumar, G. Sai Lakshmi, C. Gopi Chand, P. Naveena, L.N. Thalluri, K. Guha, Design and performance analysis of low pull-in voltage of dimple type capacitive RF MEMS shunt switch for Ka-Band. IEEE Access 7, 44471–44488 (2019)

    Google Scholar 

  21. A. Susmitha, T. Sravani, B. Yogitha, G. Keerthika, M. Sonali, P.A. Kumar, K.G. Sravani, K.S. Rao, Design and simulation of a MIM capacitor type RF MEMS switch for surface radar application. In Microelectronics, Electromagnetics and Telecommunications. (Springer, Singapore, 2019), pp. 443–452

    Google Scholar 

  22. K.S. Rao, P. Naveena, K.G. Sravani, Materials impact on the performance analysis and optimization of RF MEMS switch for 5G reconfigurable antenna. Trans. Electr. Electron. Mater. 20(4), 315–327 (2019)

    Article  Google Scholar 

  23. K.G. Sravani, K. Guha, K.S. Rao, Design and analysis of serpentine flexure based RF MEMS switch for high isolation with low pull-in voltage. Trans. Electr. Electron. Mater. 20(2), 154–164 (2019)

    Article  Google Scholar 

  24. K.S. Rao, P. Naveena, T.A. Swamy, P.A. Kumar, K. Guha, K.G. Sravani, Design and performance analysis of self-similar reconfigurable antenna by cantilever type RF MEMS switch. Microsyst. Technol. 1–12 (2019)

    Google Scholar 

  25. K.G. Sravani, T.L. Narayana, K. Guha, K.S. Rao, Role of dielectric layer and beam membrane in improving the performance of capacitive RF MEMS switches for Ka-band applications. Microsyst. Technol. 1–10 (2018)

    Google Scholar 

  26. K.G. Sravani, K. Guha, K.S. Rao, Analysis on selection of beam material for novel step structured RF-MEMS switch used for satellite communication applications. Trans. Electr. Electron. Mater. 19(6), 467–474 (2018)

    Article  Google Scholar 

  27. P.A. Kumar, K.S. Rao, K.G. Sravani, Design and simulation of millimeter wave reconfigurable antenna using iterative meandered RF MEMS switch for 5G mobile communications. Microsyst. Technol. 1–11 (2019)

    Google Scholar 

  28. K.G. Sravani, K. Srinivasa Rao. Analysis of RF MEMS shunt capacitive switch with uniform and non-uniform meanders. Microsyst. Technol. 24(2), 1309–1315 (2018)

    Google Scholar 

  29. T.M. Vu, G. Prigent, J. Ruan, R. Plana, Design and fabrication of RF-MEMS switch for V-band reconfigurable application.“ Progress Electromagn. Res. 39, 301–318 (2012)

    Google Scholar 

  30. K.S. Rao, L.N. Thalluri, K. Guha, K.G. Sravani, Fabrication and characterization of capacitive RF MEMS perforated switch. IEEE Access 6, 77519–77528 (2018)

    Article  Google Scholar 

Download references

Acknowledgements

The authors are thankful to National MEMS Design Centre, NIT Silchar, Assam, for providing essential Finite Element Modelling tools.

Author information

Authors and Affiliations

Authors

Editor information

Editors and Affiliations

Rights and permissions

Reprints and permissions

Copyright information

© 2022 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.

About this paper

Check for updates. Verify currency and authenticity via CrossMark

Cite this paper

Gopi Chand, C., Maity, R., Sravani, K.G., Maity, N.P., Guha, K., Rao, K.S. (2022). Design and Analysis of Asymmetric Cantilever Type Shunt Switch for L Band Applications. In: Chanda, C.K., Szymanski, J.R., Sikander, A., Mondal, P.K., Acharjee, D. (eds) Advanced Energy and Control Systems. Lecture Notes in Electrical Engineering, vol 820. Springer, Singapore. https://doi.org/10.1007/978-981-16-7274-3_20

Download citation

  • DOI: https://doi.org/10.1007/978-981-16-7274-3_20

  • Published:

  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-16-7273-6

  • Online ISBN: 978-981-16-7274-3

  • eBook Packages: EnergyEnergy (R0)

Publish with us

Policies and ethics