Abstract
This work exhibits the design and simulations of an Asymmetric cantilever type RF-MEMS switch with uniform and non-uniform meanders. The Electromechanical and Electromagnetic analysis are performed through the COMSOL multi-physics and HFSS software. Here, the paper aims to maintain the low actuation voltage and enhance the isolation of the switch. The single and non-uniform meanders type of switches shows good results. By comparing two switches, the non-uniform meander type switch shows better performance. The dielectric material is an important factor for getting good capacitance. The switch capacitance in the upper and lower states is 5.42 fF, 8.26 fF, and 3.68 pF, 6.43 pF. The switching time analysis of the switch is obtained as 3 µs 9 µs. The beam materials also impact to reduce the pull-in voltage, and the obtained voltages are 6.3 V and 4.3 V. The switches have good S-parameters, such as return and insertion losses of −36.24 dB, −48. 69 dB and −0.032 dB, −0.051 dB. The isolation has raised both switches as −40.473 dB and −46.182 dB at 1 to 5 GHz frequency range. So, the device becomes a low-frequency range L band, for military and radar applications.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
C.L. Goldsmith, Z. Yao, S. Eshelman, D Denniston, Performance of low-loss RF MEMS capacitive switches. IEEE Microw Guided Wave Lett. 8(8), 269–271 (1998)
G.M. Rebeiz, RF MEMS: Theory, Design, and Technology (John Wiley & Sons, 2004)
D.R. Shah, R. Sharma, H.K. Varshney, S. Parveen, A. Akhtar, Study of RF-MEMS capacitive shunt switch for microwave backhaul applications. J. Electron. Commun. Eng. 12(1), 57–65 (2017)
P.A. Kumar, K. Girija Sravani, B.V.S. Sailaja, K.V. Vineetha, K. Guha, K. Srinivasa Rao, Performance analysis of series: shunt configuration based RF MEMS switch for satellite communication applications. Microsyst. Technol. 24(12), 4909–4920 (2018)
C.-H. Chu, W.-P. Shih, S.-Y. Chung, H.-C. Tsai, T.-K. Shing, P.-Z. Chang, A low actuation voltage electrostatic actuator for RF MEMS switch applications. J. Micromech. Microeng. 17(8), 1649 (2007)
L. Muhua, J. Zhao, Z. You, G. Zhao, Design and experimental validation of a restoring force enhanced RF MEMS capacitive switch with Stiction-recovery electrodes. Microsyst. Technol. 23(8), 3091_3096 (2017)
T. Singh, N. Khaira, High isolation single-pole four-throw RF MEMS switch based on series-shunt configuration. Sci. World J. (2014)
K.S. Rao, P.S. Mounika, P. Pavan, V. Guru, N. Dinesh, P. Ashok Kumar, K. Vineetha, K. Girija Sravani, Design, simulation and analysis of RF-MEMS shunt capacitive switch for 5G application. Microsyst. Technol. 25(11), 4197–4208 (2019)
J. Sam, J. Kumar, E.A. Tetteh, E.P. Braineard, A study of why electrostatic actuation is preferred and a simulation of an electrostatically actuated cantilever beam for mems applications (2014)
Y. Mafinejad, A. Kouzani, Low insertion loss and high isolation capacitive RF MEMS switch with low pull-in voltage. Int. J. Adv. Manuf. Technol. (2017)
Y.-W. Yu, J. Zhu, S.-X. Jia, Yi. Shi, A high isolation series-shunt RF MEMS switch. Sensors 9(6), 4455–4464 (2009)
M. Angira, K. Rangra, Performance improvement of RF-MEMS capacitive switch via asymmetric structure design. Microsyst. Technol. 21(7), 1447–1452 (2015)
W.-B. Zheng, Q.-A. Huang, X.-P. Liao, F.-X. Li, RF MEMS membrane switches on GaAs substrates for X-band applications. J. Microelectromech. Syst. 14(3), 464–471 (2005)
E.A. Savin, K.A. Chadin, R.V. Kirtaev, Design and manufacturing of X-band RF MEMS switches. Microsyst. Technol. 24(6), 2783–2788 (2018)
A. Ziaei, S. Bansropun, P. Martins, M. Le Baillif, Fast high power capacitive RF-MEMS switch for X-Band applications.“ In 2015 45th European Solid State Device Research Conference (ESSDERC), (IEEE) pp. 153–155 (2015)
A.K. Ravirala, L.K. Bethapudi, J. Kommareddy, B.S. Thommandru, S. Jasti, P.R. Gorantla, A. Puli, G.S. Karumuri, S.R. Karumuri, Design and performance analysis of uniform meander structured RF MEMS capacitive shunt switch along with perforations. Microsys. Technol. 24(2), 901–908 (2018)
T. Lakshmi Narayana, K. Girija Sravani, K. Srinivasa Rao, A micro level electrostatically actuated cantilever and metal contact based series RF MEMS switch for multi-band applications. Cogent Eng. 4(1), 1323367 (2017)
K. Girija Sravani, G. Sudheer Babu, M. Ramesh, V. Prudhvi Raj, D. Prathyusha, K. Srinivasa Rao, Beam and dielectric materials impact on improvement of the performance of a novel capacitive shunt RF MEMS switch. Int. J. Numer. Model. Electron. Netw. Dev. Fields 32(5), e2598 (2019)
K.S. Rao, C. Gopi Chand, K. Girija Sravani, D. Prathyusha, P. Naveena, G. Sai Lakshmi, P. Ashok Kumar, T. Lakshmi Narayana, Design, modeling and analysis of perforated RF MEMS capacitive shunt switch. IEEE Access 7, 74869–74878 (2019)
K.G. Sravani, D. Prathyusha, K. Srinivasa Rao, P. Ashok Kumar, G. Sai Lakshmi, C. Gopi Chand, P. Naveena, L.N. Thalluri, K. Guha, Design and performance analysis of low pull-in voltage of dimple type capacitive RF MEMS shunt switch for Ka-Band. IEEE Access 7, 44471–44488 (2019)
A. Susmitha, T. Sravani, B. Yogitha, G. Keerthika, M. Sonali, P.A. Kumar, K.G. Sravani, K.S. Rao, Design and simulation of a MIM capacitor type RF MEMS switch for surface radar application. In Microelectronics, Electromagnetics and Telecommunications. (Springer, Singapore, 2019), pp. 443–452
K.S. Rao, P. Naveena, K.G. Sravani, Materials impact on the performance analysis and optimization of RF MEMS switch for 5G reconfigurable antenna. Trans. Electr. Electron. Mater. 20(4), 315–327 (2019)
K.G. Sravani, K. Guha, K.S. Rao, Design and analysis of serpentine flexure based RF MEMS switch for high isolation with low pull-in voltage. Trans. Electr. Electron. Mater. 20(2), 154–164 (2019)
K.S. Rao, P. Naveena, T.A. Swamy, P.A. Kumar, K. Guha, K.G. Sravani, Design and performance analysis of self-similar reconfigurable antenna by cantilever type RF MEMS switch. Microsyst. Technol. 1–12 (2019)
K.G. Sravani, T.L. Narayana, K. Guha, K.S. Rao, Role of dielectric layer and beam membrane in improving the performance of capacitive RF MEMS switches for Ka-band applications. Microsyst. Technol. 1–10 (2018)
K.G. Sravani, K. Guha, K.S. Rao, Analysis on selection of beam material for novel step structured RF-MEMS switch used for satellite communication applications. Trans. Electr. Electron. Mater. 19(6), 467–474 (2018)
P.A. Kumar, K.S. Rao, K.G. Sravani, Design and simulation of millimeter wave reconfigurable antenna using iterative meandered RF MEMS switch for 5G mobile communications. Microsyst. Technol. 1–11 (2019)
K.G. Sravani, K. Srinivasa Rao. Analysis of RF MEMS shunt capacitive switch with uniform and non-uniform meanders. Microsyst. Technol. 24(2), 1309–1315 (2018)
T.M. Vu, G. Prigent, J. Ruan, R. Plana, Design and fabrication of RF-MEMS switch for V-band reconfigurable application.“ Progress Electromagn. Res. 39, 301–318 (2012)
K.S. Rao, L.N. Thalluri, K. Guha, K.G. Sravani, Fabrication and characterization of capacitive RF MEMS perforated switch. IEEE Access 6, 77519–77528 (2018)
Acknowledgements
The authors are thankful to National MEMS Design Centre, NIT Silchar, Assam, for providing essential Finite Element Modelling tools.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2022 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Gopi Chand, C., Maity, R., Sravani, K.G., Maity, N.P., Guha, K., Rao, K.S. (2022). Design and Analysis of Asymmetric Cantilever Type Shunt Switch for L Band Applications. In: Chanda, C.K., Szymanski, J.R., Sikander, A., Mondal, P.K., Acharjee, D. (eds) Advanced Energy and Control Systems. Lecture Notes in Electrical Engineering, vol 820. Springer, Singapore. https://doi.org/10.1007/978-981-16-7274-3_20
Download citation
DOI: https://doi.org/10.1007/978-981-16-7274-3_20
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-16-7273-6
Online ISBN: 978-981-16-7274-3
eBook Packages: EnergyEnergy (R0)