Abstract
Through this research, we have gone for various bandgap and thickness of the CIGS solar cell’s absorber layer to identify the highest possible efficiency as well as other components. And hopefully with the Solar Cell Capacitance Simulator (SCAPS) program, we have been able to improve performance. The determined value was ranged from 8.70% < efficiency < 28.15%, 0.4464 < open-circuit voltage < 1.4592, 25.87 < short-circuit voltage < 38.197 as well as various form factor. These values were collected for various bandgap and thickness. Bandgap was ranged to 1.02–1.75 as wider bandgap decreases the efficiency so we have keep that in mind while simulating. The thickness was ranged to 100–3000 nm. While studying we have found great efficiency of CIGS solar cell. The structure of reference solar cell consists of ZnO, CdS, CIGS, Mo, SLG, and the cell we have used is the glockre’s CIGS reference solar cell. And in our proposed structure, we have MoSe2 beneath the CIGS absorber layer.
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Akter, R. et al. (2022). Impact Analysis of Different Gap on CIGS Photovoltaic Device with MoSe2 as Tunnel Layer. In: Kolhe, M.L., Jaju, S.B., Diagavane, P.M. (eds) Smart Technologies for Energy, Environment and Sustainable Development, Vol 1. Springer Proceedings in Energy. Springer, Singapore. https://doi.org/10.1007/978-981-16-6875-3_36
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