Abstract
Nickel oxide (NiO) nanoflakes films for Extended gate field effect transistor (EGFET) pH sensors were synthesized and deposited by chemical bath deposition (CBD) method on indium titanium oxide (ITO) with glass substrate. The properties of NiO nanoflakes layer and pH sensing behaviour of the device were studied. Field emission scanning electron microscopy (FESEM) result shows that the NiO/Ni(OH)2 films consists of porous net-like structure made up of interconnected nanoflake wall, with wall thickness of about 300 nm for the annealed NiO layer sample at 300 °C. XRD (X-ray diffraction) analysis demonstrated that the NiO nanoflakes has a cubic structure with the preferential orientation of the films at (100), (200) and (220). The devices exhibited superior sensing characteristic, due to the small size of the crystal and wide pore/flakes wall size of the NiO layer. The results confirmed that the NiO nanoflakes membrane has high sensitivity (72 µA/pH and 57 mV/pH) as compared with previews reports on NiO as sensing membrane for pH sensor.
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Acknowledgements
The authors wish to convey their sincere appreciation to School of Physics, Universiti Sains Malaysia, Department of Physics, Bauchi State University, Gadau together with GOT Incentive Grant 1001/PFIZIK/822055 for the wonderful supports of this successful accomplishment.
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Abubakar, D., Ahmed, N.M., Zango, Z.U. (2021). Sensitivity of Nickel Oxide Nanoflakes Layer on Extend Gate Field Effect Transistor for pH Sensor. In: Abdul Karim, S.A., Abd Shukur, M.F., Fai Kait, C., Soleimani, H., Sakidin, H. (eds) Proceedings of the 6th International Conference on Fundamental and Applied Sciences. Springer Proceedings in Complexity. Springer, Singapore. https://doi.org/10.1007/978-981-16-4513-6_26
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