Abstract
This paper presents an effect of temperature on small-signal equivalent circuit parameters that have been analyzed for AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT). The analysis has been performed with the temperature range from −50 to 100 °C by S-parameter calculations at 100 GHz frequency. The thermal analysis of equivalent circuit parameters was investigated for the first-time with the proposed device. The equivalent circuit parameters such as intrinsic delay time (τ), gate–source capacitance (Cgs), extrinsic resistances (Rg, Rs, Rd), and intrinsic resistances (Rds, Rgd, Rin) show a positive shift with increasing temperature. On the other hand, intrinsic transconductance (gm), drain–source capacitance (Cds), and gate–drain capacitance (Cgd) show a negative shift with temperature. Obtained results will give some valuable information for design optimizations of GaN-based Monolithic microwave integrated circuits (MMICs) and other high power/frequency applications.
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Amarnath, G., Guduri, M., Vinod, A., Kavicharan, M. (2022). Study of Temperature Effect on MOS-HEMT Small-Signal Parameters. In: Lenka, T.R., Misra, D., Biswas, A. (eds) Micro and Nanoelectronics Devices, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 781. Springer, Singapore. https://doi.org/10.1007/978-981-16-3767-4_24
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DOI: https://doi.org/10.1007/978-981-16-3767-4_24
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