Abstract
This paper investigates the detection of various neutral biomolecules having high dielectric constant using L-shaped Tunnel Field Effect Transistors (TFETs) in wet environment. This scheme relies on entire removal of vertical oxide arm of L-shaped device in which the biomolecules are captured by the receptors attached to the oxide-semiconductor interface. The dielectric constant of the biomolecules influences current-voltage characteristics of the device. The transfer characteristics of the device are obtained using well-calibrated SILVACO ATLAS device simulator. Our findings show that carrier in-line tunneling with gate field enables the opportunity to detect the presence of a biomolecule such as pyridine with a maximum voltage sensitivity of 1.3 V in a watery medium. Obtained results suggest that the proposed sensor operates with high or comparable sensitivity for sensing biomolecules relative to earlier findings in the literature.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Ajay, N.R., Saxena, M., Gupta, M.: Drain current model of a four-gate dielectric modulated MOSFET for application as a biosensor. IEEE Trans. Electron. Device 62, 2636–2644 (2015)
Bergveld, P.: Thirty years of ISFET Technology What happened in the past 30 years and what may happen in the next 30 years. Sens. Actuators. B. Chem. 88, 1–20 (2003)
Kim, Y.J., Ahn, H.J., Choi, J.S., Im, M., Kim, S., Duarte, P.J., Kim, H.C., Park, J.T., Lee, Y.S., Choi, K.Y.: An underlap channel-embedded field-effect transistor for biosensor application in watery and dry environment. IEEE Trans. Nanotech. 11, 390–394 (2012)
Lee, W.K., Choi, J.S., Ahn, H.J., Moon, I.D., Park, T.J., Lee, S.Y., Choi, K.Y.: An underlap field-effect transistor for electrical detection of influenza, Appl. Phys. Lett. 96,1–3 (2010)
Ajay, N.R., Saxena, M., Gupta, M.: Analytical model of pH sensing characteristics of junctionless silicon on insulator ISFET. IEEE Trans. Electron. Device 64, 1742–1750 (2017)
Bandiziol, A., Palestri, P., Pittino, F., Esseni, D., Selmi, L.: A TCAD based methodology to model the site-binding charge at ISFET/electrolyte interfaces. IEEE Trans. Electron. Devices 62, 3379–3386 (2015)
Bhattacharyya, M.I., Cohen, S., Shalabny, A., Bashouti, M., Akabayov, B., Shalev, G.: Specific and label-free immunosensing of protein-protein interactions with silicon-based immune FETs. Biosens. Bioelectron. 132, 143–161 (2019)
Balakrishnan, B., Balamurugan, B.N.: 2D analytical modeling and simulation of dual material DG MOSFET for biosensing application, AEU Int. J. Electron. Commun. 99, 193– 200 (2019)
Singh, N.K., Dutta, K.P.: Analytical modeling of a high–K underlap dielectric and charge–modulated silicon on nothing FET based biosensor. J. Comput. Electron. 19, 1126–1135 (2020)
Ionescu, M.A., Riel, H.: Tunnel field effect transistors as energy efficient electronic switches. Nature 479, 329–337 (2011)
Omura, Y., Mori, Y., Sato, S., Mallik, A.: Revisiting the role of trap-assisted-tunneling process on current-voltage characteristics in tunnel field-effect transistors. J. Appl. Phys. 123, 1–6 (2018)
Mori, Y., Sato, S., Omura, Y., Mallik, A.: Proposal of the possible method to define the threshold voltage of lateral tunnel field-effect transistors. Technol. Rep. Kansai Univ. (Osaka, Japan) 59, 75–81 (2017)
Kim, W.S., Kim, H.J., Liu, K.J.T., Choi, Y.W., Park, G.B.: Demonstration of L-shaped tunnel field effect transistors. IEEE Trans. Electron. Devices 63, 1774–1777 (2016)
ATLAS User’s Manual: Silvaco. Santa Clara, CA, USA (2013)
Shoorideh, K., Chui, O.C.: On the origin of enhanced sensitivity in nanoscale FET-based biosensors. PNAS 111, 5111–5116 (2014)
Dubey, A., Narang, R., Saxena, M., Gupta, M.: Investigation of total ionizing dose effect on SOI tunnel FET. Superlattices Microstruct. 133, 49–54 (2019)
Rahman, E., Shadman, A., Khosru, M.D.Q.: Effect of biomolecule position and fill in factor on sensitivity of a Dielectric Modulated Double Gate Junction less MOSFET biosensor. Sens. Bio-Sens. Res. 13, 49–54 (2017)
Ahn, H.J., Choi, J.S., Han, W.J., Park, J.T., Lee, Y.S., Choi, K.Y.: Double-Gate nanowire field effect transistor for a biosensor. Nano Lett. 10, 2934–2938 (2010)
Acknowledgements
The first author acknowledges CSIR, HRDG, India for providing fellowship for SRF vide File No. 09/028(1028)/2018-EMR-I dtd. 16.04.2018.
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2021 The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Chakraborti, P., Biswas, A., Mallik, A. (2021). High-K Biomolecule Sensor Based on L-Shaped Tunnel FET. In: Biswas, A., Saxena, R., De, D. (eds) Microelectronics, Circuits and Systems. Lecture Notes in Electrical Engineering, vol 755. Springer, Singapore. https://doi.org/10.1007/978-981-16-1570-2_3
Download citation
DOI: https://doi.org/10.1007/978-981-16-1570-2_3
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-16-1569-6
Online ISBN: 978-981-16-1570-2
eBook Packages: EngineeringEngineering (R0)