Abstract
This paper presents a fully integrated operational transconductor amplifier (OTA) based band pass filter (BPF). This design has been implemented using simple CMOS based current mirror circuits. The overall analysis and simulation implemented in UMC 180 nm technology. The band pass filter depends on MOS based inductor that is constructed from Operational Trans-conductor amplifiers (OTA). Centre frequency and quality factor depends upon the capacitor values. This circuit offers malleable common-mode ranges. The 3 dB lower cutoff and the upper cutoff frequency is 1.5 kHz and 6.9 kHz respectively. The centre frequency can be changed by varying capacitor value. The total use of the DC current is 5.8 mA @ 1.8 V supply. This circuit also gives the DC gain nearly 22 dB. And overall power dissipation is nearly 2.4 μW .
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Jakodiya, S., Gurjar, R.C., Gamad, R.S. (2021). Design of OTA Based Band Pass Filter Using 180 nm Technology. In: Nath, V., Mandal, J.K. (eds) Proceeding of Fifth International Conference on Microelectronics, Computing and Communication Systems. Lecture Notes in Electrical Engineering, vol 748. Springer, Singapore. https://doi.org/10.1007/978-981-16-0275-7_58
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DOI: https://doi.org/10.1007/978-981-16-0275-7_58
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