Abstract
The development of the silicon (Si)-based deep submicron devices has promised significant improvement in the quality of life, including new technologies for the treatment of diseases and greater efficiency for storing and processing the computer data. It is a well-known fact that electronics industry has undoubtedly benefited from the Si-based technology that uses much lower power and offers cost-effective circuits and devices due to mass fabrication. But is it feasible for Si technology to improve and revive the electronics industry, speed up its growth, and enable rapid development of portable and compact products? An additional aspect which needs to be established is the choice of the right innovative materials and devices that will allow the electronics industry to grow and develop new low-power systems, along with the possible potential of renovating this industry. Various researchers throughout the world are evaluating distinct and effective methodologies to solve this problem, and gallium nitride (GaN) technology has come out as one of the major breakthroughs and innovations. This chapter mainly focuses on the basics of advanced materials beyond Si and germanium (Ge) which can be used for the fabrication of various electronic devices such as transistors, gates, oscillators, and amplifiers. It addresses the advantages and disadvantages associated with the usage of these materials for modern electronic devices and low-power VLSI circuits.
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Sankhyan, S., Chaudhary, T., Khanna, G., Chandel, R. (2020). Gallium Nitride—Emerging Future Technology for Low-Power Nanoscale IC Design. In: Dhiman, R., Chandel, R. (eds) Nanoscale VLSI. Energy Systems in Electrical Engineering. Springer, Singapore. https://doi.org/10.1007/978-981-15-7937-0_9
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DOI: https://doi.org/10.1007/978-981-15-7937-0_9
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