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Migration from Silicon to Gallium Nitride Devices—A Review

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Advances in Electrical and Computer Technologies

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 672))

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Abstract

With the advancement in technology, the need for high efficient, switching speed and compact size of converters are gaining popularity. These converters require power devices having high breakdown voltage, thermal conductivity, switching frequency and operating temperature. Silicon devices exhibit limitations in switching frequency and operation at high temperature. The limitations of Si devices lead to advancements of wide band gap devices. The superior electrical properties of WBG devices make them potential candidates for use in high temperature, voltage and switching speed converter applications. Among the many WBG devices, silicon carbide, diamond and gallium nitride are a promising candidates. This paper deals with comparisons between conventional Si and GaN devices and highlights overall state of the art and future trends of GaN devices.

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Authors and Affiliations

  1. NMAM Institute of Technology, Nitte, India

    H. Swathi Hatwar, K. Suryanarayana, M. Ravikiran Rao & Raksha Adappa

Authors
  1. H. Swathi Hatwar
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  2. K. Suryanarayana
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  3. M. Ravikiran Rao
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  4. Raksha Adappa
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Corresponding author

Correspondence to H. Swathi Hatwar .

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Editors and Affiliations

  1. SVS College of Engineering, Coimbatore, Tamil Nadu, India

    Thangaprakash Sengodan

  2. Kuwait College of Science and Technology, Doha, Kuwait

    M. Murugappan

  3. Covenant University, Ota, Nigeria

    Sanjay Misra

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Swathi Hatwar, H., Suryanarayana, K., Ravikiran Rao, M., Adappa, R. (2020). Migration from Silicon to Gallium Nitride Devices—A Review. In: Sengodan, T., Murugappan, M., Misra, S. (eds) Advances in Electrical and Computer Technologies. Lecture Notes in Electrical Engineering, vol 672. Springer, Singapore. https://doi.org/10.1007/978-981-15-5558-9_88

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  • DOI: https://doi.org/10.1007/978-981-15-5558-9_88

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-15-5557-2

  • Online ISBN: 978-981-15-5558-9

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