Abstract
The experimental fabrication of highly ordered perpendicular TiO2 and In2O3 nanowires (NW) on n-type silicon (Si) substrate has been reported in this paper. The glancing angle deposition technique (GLAD) has been employed to synthesis In2O3 NW-TiO2 NW heterostructure and ordinary TiO2 NW on n-Si substrate inside e-beam evaporation chamber. An average of ~1.4 fold enhancement in absorption at UV and visible spectra have been observed in case of hetero-structured In2O3 NW-TiO2 NW/TiO2 TF/n-Si compared to simple TiO2 NW/TiO2 TF/n-Si samples. The main band gap transition in case of hetero-structure In2O3 NW-TiO2 NW has been observed at ~3.3 eV and that in case of simple TiO2 NW has been observed at ~3.1 eV under open-air room temperature.
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Acknowledgements
The authors would like to thank ECE department and Dr. Biswajit Saha, NIT Agartala (Department of Physics) for providing the facility to sample testing for the absorption measurement.
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Yadav, V.K., Yadav, V.K., Nath, A., Raman, R., Choudhury, P., Sarkar, M.B. (2021). GLAD Assisted In2O3 NW-TiO2 NW Heterostructure for Enhanced UV-Vis Absorption. In: Nath, V., Mandal, J.K. (eds) Proceedings of the Fourth International Conference on Microelectronics, Computing and Communication Systems. Lecture Notes in Electrical Engineering, vol 673. Springer, Singapore. https://doi.org/10.1007/978-981-15-5546-6_65
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