Abstract
In this paper, we are designing an efficient memory using LVCMOS and HSTL-I IO Standards on 28 nm (Artix-7) FPGA. There are various families, LVCMOS and HSTL-I families are compared for finding the maximum power-efficient IO standards between them. We tested 64-bit RAM circuit at different range of frequencies of Intel Processor that are at Intel I-3 5005U 2.0 GHz, Intel I-3, 5015U 2.1 GHz, Intel I-3 5157U 2.5 GHz, Intel I-5 3380M 2.9 GHz, Intel I-5 3340U 3.1 GHz, and Intel I-7 3370K 3.5 GHz frequency range to find the most power-efficient circuit. When we migrate our design to LVCMOS from HSTL, then there is 40–60% saving in power dissipation of memory circuits.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Lee, D.: Area efficient ROM-embedded SRAM cache. IEEE Trans. Very Large Scale Integr. (VLSI) Syst. 21(9) (2013)
Lee, D., Fong, X.: R-MRAM: a ROM-embedded STT MRAM cache. IEEE Electron Device Lett. 34(10) (2013)
Sasagawa, R., Fukushi, I., Hamaminato, M., Kawashima, S.: High-speed cascode sensing scheme for 1.0 V contact-programming mask ROM. In: Proceedings of the IEEE Symposium on VLSI Circuits Digest of Technical Papers, pp. 95–96 (1999)
Sweety, B.D., Pandey, B., Singh, D., Aaseri, R.: IO standard based green multiplexer design & implementation on FPGA. In: IEEE 5th International Conference on Computational Intelligence and Communication Network (CICN), 27–29 Sept 2013
Kalra, L., Bansal, N., Saini, R., Bansal, M., Pandey, B.: LVCMOS I/O standard based environment friendly low power ROM design on FPGA. In: International Conference on “Computing for Sustainable Global Development”, 11th–13th Mar 2015
Khare, K., Ku, S.H., Donaton, R.A., Greco, S., Brodsky, C., Chen, X., Chou, A., DellaGuardia, R., Deshpande, S., Doris, B., Fung, S.K.H., Gabor, A., Gribelyuk, M., Holmes, S., Jamin, F.F., Lai, W.L., Lee, W.H., Li, Y., McFarland, P., Mo, R., Mittl, S., Narasimha, S., Nielsen, D., Purtell, R., Rausch, W., Sankaran, S., Snare, J., Tsou, L., Vayshenker, A., Wagner, T., Wehella-Gamage, D., Wu, E., Wu, S., Yan, W., Barth, E., Ferguson, R., Gilbert, P., Schepis, D., Sekiguchi, A., Goldblatt, R., Welser, J., Muller, W.H., Agnello, P.: A high performance 90 nm SOI technology with 0.992 μm2 6T-SRAM cell. In: Proceedings of the IEEE IEDM Digest of Technical Papers, Dec 2002, pp. 8–11
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2018 Springer Nature Singapore Pte Ltd.
About this paper
Cite this paper
Agrawal, T., Srivastava, V. (2018). Design of Energy-Efficient Random Access Memory Circuit Using Low-Voltage CMOS and High-Speed Transreceiver Logic-I I/O Standard on 28 nm FPGA. In: Muttoo, S. (eds) System and Architecture. Advances in Intelligent Systems and Computing, vol 732. Springer, Singapore. https://doi.org/10.1007/978-981-10-8533-8_10
Download citation
DOI: https://doi.org/10.1007/978-981-10-8533-8_10
Published:
Publisher Name: Springer, Singapore
Print ISBN: 978-981-10-8532-1
Online ISBN: 978-981-10-8533-8
eBook Packages: EngineeringEngineering (R0)