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C-HYFLUR: Recovery for Power-off Failure in Flash Memory Storage Systems Using Compression Scheme for HYbrid FLUsh Recovery

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Mobile and Wireless Technologies 2017 (ICMWT 2017)

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 425))

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Abstract

Flash memory has a variety of advantages such as the better performance compare to hard disk, shock resistance, small size, and so on. Therefore the use ratio of flash memory is being increased. But if the power-off failure is occurred, flash memory storage systems may loss mapping information. So in this paper, we propose power-off recovery scheme, called C-HYFLUR. We have applied C-HYFLUR to page mapping FTL and implemented on a platform board, and compared with the existing recovery schemes through several evaluations. Compare to existing recovery schemes, the overhead of C-HYFLUR is very low.

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Acknowledgement

This research was supported by the MISP (Ministry of Science, ICT & Future Planning), Korea, under the National Program for Excellence in SW supervised by the IITP (Institute for Information & communications Technology Promotion) (2015-0-00908)

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Authors and Affiliations

  1. Department of Computer Engineering, Ajou University, Suwon, Korea

    Ji-Hwan Chung, Sungsoo Kim & Tae-Sun Chung

Authors
  1. Ji-Hwan Chung
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  2. Sungsoo Kim
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  3. Tae-Sun Chung
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Corresponding author

Correspondence to Tae-Sun Chung .

Editor information

Editors and Affiliations

  1. B-dong Intellige 2, Korea Industry Security Forum, Seongnam-si, Kyonggi-do, Korea (Republic of)

    Kuinam J. Kim

  2. modelizeIT Inc., CEO and NYU , Stony Brook, New York, USA

    Nikolai Joukov

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© 2018 Springer Science+Business Media Singapore

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Chung, JH., Kim, S., Chung, TS. (2018). C-HYFLUR: Recovery for Power-off Failure in Flash Memory Storage Systems Using Compression Scheme for HYbrid FLUsh Recovery. In: Kim, K., Joukov, N. (eds) Mobile and Wireless Technologies 2017. ICMWT 2017. Lecture Notes in Electrical Engineering, vol 425. Springer, Singapore. https://doi.org/10.1007/978-981-10-5281-1_32

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  • DOI: https://doi.org/10.1007/978-981-10-5281-1_32

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  • Publisher Name: Springer, Singapore

  • Print ISBN: 978-981-10-5280-4

  • Online ISBN: 978-981-10-5281-1

  • eBook Packages: EngineeringEngineering (R0)

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