Abstract
Structural, optical and electrical properties of ZnO thin films doped with different elements (Al, Al + H, V, Nb), deposited by r.f. magnetron sputtering on glass substrates at different temperature Ts between 50 and 500 °C are studied. XRD spectra demonstrate a preferential (002) crystallographic orientation with the c-axis perpendicular to the substrate surface and grains sizes of about 19–29 nm. The value of band gap energy Eg is in the range of 3.49–3.58 eV for ZnO:Al, 3.51–3.58 eV for ZnO:Al:H, 3.44–3.47 eV for ZnO:V, and 3.28–3.44 eV for ZnO:Nb. The deposited ZnO films doped with Al, H, V and Nb have low resistivities of 1.6–2.2⋅10−3 Ωcm. The transparency of the studied films is about 85–90 % in the visible region. The obtained transparent conductive ZnO thin films can be applied in solar cells and other optoelectronic devices as TCO.
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Lovchinov, K., Petrov, M., Angelov, O., Nichev, H., Mikli, V., Dimova-Malinovska, D. (2015). Structural, Optical and Electrical Properties of ZnO Thin Films Doped with Al, V and Nb, Deposited by r.f. Magnetron Sputtering. In: Petkov, P., Tsiulyanu, D., Kulisch, W., Popov, C. (eds) Nanoscience Advances in CBRN Agents Detection, Information and Energy Security. NATO Science for Peace and Security Series A: Chemistry and Biology. Springer, Dordrecht. https://doi.org/10.1007/978-94-017-9697-2_29
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DOI: https://doi.org/10.1007/978-94-017-9697-2_29
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