Abstract
In this chapter, the realized stand-alone poly-SiGe pressure sensors (both piezoresistive and capacitive) are tested and evaluated. The tested pressure sensors were fabricated following the process flow described in Chap. 4. The chapter begins with a description of the employed measurement setup. In this work, the fabricated sensors are tested in the pressure range from 0 to 1 bar using a Suss Microtec PMV-150 environmental chamber. The piezoresistive pressure sensors are evaluated mainly in terms of pressure sensitivity, although other aspects, such as temperature coefficient of sensitivity, offset voltage and non-linearity are also considered. The obtained measurement results are compared to the values predicted by simulations (Chap. 3); to explain the mismatch between the measured and the simulated sensitivity, further simulations, including the effect of the SiC isolation layer and the oxide sealing layer, are performed. On the other hand, for the capacitive pressure sensors only the sensitivity is evaluated. The chapter ends with a summary of the obtained results, including some observations about the performance of the fabricated sensors.
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References
F.-M. Werner, MEMS Wafer-level test challenges: applications, solutions and future visions. Available at: www.nexus-mems.com
PMV200: 200 mm manual vacuum probing system, datasheet. Available at www.suss.com
Hewlett Packard 4156A Precision semiconductor parameter analyzer: general descripton and operating instructions. Available at www.cleanroom.byu.edu/HP4156A.phtml
J.W. Gardner et al., Microsensors, MEMS and Smart Devices (John Wiley & Sons, Chichester 2007), p. 54, Chapter 3
Q. Wang, J. Ding, W. Wang, Fabrication and temperature coefficient compensation technology of low cost high temperature pressure sensor. Sens. Actuators A 120, 468–473 (2005)
V.A. Gridchin, V.M. Lubimsky, M.P. Sarina, Piezoresistive properties of polysilicon films. Sens. Actuators A 49, 67–72 (1995)
P. Kleimann, B. Semmache, M. Le Berre, D. Barbiera, Thermal drift of piezoresistive properties of LPCVD polysilicon thin films between room temperature and 200 \({^\circ }\)C. Mater. Sci. Eng.: B 46(1–3), 43–46 (1997)
R. Hull, Properties of Crystalline Silicon (INSPEC, The Institution of Electrical Engineers, London, 1999)
B. Puers et al., A capacitive pressure sensor with low impedance output and active suppression of parasitic effects. Sens. Actuators A21–A23, 108–114 (1990)
NPP-301 series MEMS pressure sensors from general electric: measurement & control solutions, datasheet. Available at http://www.ge-mcs.com/en/pressure-mems/mems-sensors/npp-301.html
Demystifying piezoresistive pressure sensors. Available at: http://www.maxim-ic.com/app-notes/index.mvp/id/871
P562-series MEMS pressure sensors from general electric: measurement & control solutions, datasheet. Available at http://www.ge-mcs.com/en/pressure-mems/mems-elementsdevices/p562.html
MPX2300DT1: Compensated pressure sensor - medical grade. Available at: http://www.freescale.com/webapp/sps/site/prod_summary.jsp?code=MPX2300DT1
Freescale MPX10 Series Pressure Sensor Datasheet. Available at: http://www.freescale.com/files/sensors/doc/data_sheet/MPX10.pdf
J.R. Mallon, J.R.F. Pourahmadi, K. Petersen, P. Barth, T. Vermeulen, J. Bryzek, Low-pressure sensors employing bossed diaphragms and precision etch-stopping. Sens. Actuators A 21–23, 137–41 (1990)
L. B. Wilner, A diffused silicon pressure transducer with stress concentrated at the transverse gages, in Transaction of the ISA 23rd International Instrumentation Symposium (Las Vegas, 1978) 17, 83–88
E4980 Precision LCR meter 20 Hz to 2 MHz, product datasheet, www.agilent.com
K. Kasten, N. Kordas, H. Kappat, W. Mokwa, Capacitive pressure sensor with monolithically integrated CMOS readout circuit for high temperature applications. Sens. Actuators A 97–98, 83–87 (2002)
R. Puers, Capacitive pressure sensors: when and how to use them. Sens. Actuators A 37–38, 93–105 (1993)
M. Pedersen, M.G.H. Meijerink, W. Olthuis, P. Bergueld, A capacitive differential pressure sensor with polyimide diaphragm. J. Micromech. Microeng. 7, 250–252 (1997)
C.-L. Dai, P.-W Lu, C. Chang and C.-Y Liu, Capacitive micro pressure sensor integrated with a ring oscillator circuit on chip. Sensors vol. 9, 10158–10170, 2009
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Ruiz, P.G., Meyer, K.D., Witvrouw, A. (2014). Characterization of Poly-SiGe Pressure Sensors. In: Poly-SiGe for MEMS-above-CMOS Sensors. Springer Series in Advanced Microelectronics, vol 44. Springer, Dordrecht. https://doi.org/10.1007/978-94-007-6799-7_6
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