Modeling a Nano Cylindrical MOSFET Considering Parabolic Potential Well Approximation

Abstract

In this paper an analytical surface potential-based model considering the quantum mechanical effect at the semiconductor-oxide interface of a nanoscale cylindrical MOSFET is developed. The model considers the decoupling of the Poisson’s and Schrodinger’s equations via parabolic potential well approximation instead of fully self-consistent approach. Using the developed model, the effect of variation on surface potential, threshold voltage, drain current, with the extension into the saturation regime alongwith the variation of substrate doping, silicon pillar diameter, drain to source voltage, and gate to source voltage are observed. While obtaining the results, a large discrepancy in the device characteristics from the classical analysis is seen and this proves the need for quantum analysis to be done for highly doped substrates.