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Frequency Response of Si/SiGe Heterojunction Bipolar Transistor

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Computational Advancement in Communication Circuits and Systems

Part of the book series: Lecture Notes in Electrical Engineering ((LNEE,volume 335))

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Abstract

Figure of merits are key performance indicators of any RF device and can be used to assess the performance of the heterojunction transistors operating at very high frequency range. For HBT, stability and power gain are the key figures of merits to consider. The Agilent Advanced Design System has been used here to simulate the frequency response of Si/SiGe HBT with Mextram model. The results of the simulation are used further to establish the figure of merits for the Si/SiGe HBT in the GHz frequency ranges that can be useful for operations at wireless and satellite communication systems.

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References

  1. J.M. Rollett, Stability and power-gain invariants of linear two ports. Circ. Theor. IRE Trans. IEEE 9(1), 29–32 (1962)

    Google Scholar 

  2. F. Schwierz, J.J. Liou, Semiconductor devices for RF applications: evolution and current status. Microelectron. Reliab., Elsevier 41, 145–168 (2001)

    Google Scholar 

  3. S.J. Mason, Power gain in feedback amplifier. Circ. Theor. IRE Trans. IEEE CT-1(2), 20–25 (1954)

    Google Scholar 

  4. Stability factor and available gain of amplifiers. http://www.microwaves101.com

  5. O. Esame, G. Yasar, I. Tekin, A. Bozkurt, Performance comparison of state-of-the-art heterojunction bipolar devices (HBT) based on AlGaAs/GaAs, Si/SiGe and InGaAs/InP. Microelectron. J., Elsevier 35, 901–908 (2004)

    Google Scholar 

  6. Decibel-milliwatts. http://en.wikipedia.org/wiki/DBm

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Author information

Authors and Affiliations

  1. Narula Institute of Technology, Kolkata, 700109, India

    Arnima Das, Maitreyi Ray Kanjilal & Payel Biswas

Authors
  1. Arnima Das
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  2. Maitreyi Ray Kanjilal
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  3. Payel Biswas
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Corresponding author

Correspondence to Arnima Das .

Editor information

Editors and Affiliations

  1. School of Electronics & Computer Science, University of Southampton, Southampton, United Kingdom

    Koushik Maharatna

  2. Design & Growth, Institute of Materials Research & Engg, Singapore, Singapore

    Goutam Kumar Dalapati

  3. Electronics and Telecommunication Engg, Jadavpur University, Kolkata, West Bengal, India

    P K Banerjee

  4. Electronics and Electrical Communication, Indian Institute of Technology Kharagpur, Kharagpur, West Bengal, India

    Amiya Kumar Mallick

  5. Centre for Millimeter Wave Semiconductor Devices and Systems, Defence Research and Development Org., Kolkata, West Bengal, India

    Moumita Mukherjee

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Das, A., Kanjilal, M.R., Biswas, P. (2015). Frequency Response of Si/SiGe Heterojunction Bipolar Transistor. In: Maharatna, K., Dalapati, G., Banerjee, P., Mallick, A., Mukherjee, M. (eds) Computational Advancement in Communication Circuits and Systems. Lecture Notes in Electrical Engineering, vol 335. Springer, New Delhi. https://doi.org/10.1007/978-81-322-2274-3_37

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  • DOI: https://doi.org/10.1007/978-81-322-2274-3_37

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  • Publisher Name: Springer, New Delhi

  • Print ISBN: 978-81-322-2273-6

  • Online ISBN: 978-81-322-2274-3

  • eBook Packages: EngineeringEngineering (R0)

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