Abstract
Conventional electronic devices have been based on semiconductor transistor technology, in which electron charge is controlled by electrical means. Since the emergence of the integrated circuit concept for semiconductor devices, device performance has significantly advanced via large-scale integration with the miniaturization of transistors. However, these devices are not energy efficient because of their substantial Joule heat generation and volatile characteristics. In addition, owing to recent development of top-down nanofabrication technology, device dimensions are close to the intrinsic physical scalability limits within a few-nanometer range. To overcome these serious obstacles, innovative materials, device structures, and operational principles have been recently demonstrated. In this chapter, future prospects of next-generation nanoelectronics with low power consumption are discussed with consideration of the aforementioned proposals.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Proc IEEE 89(3), March 2001 Limit Si technology
Takagi S, Maeda T, Taoka N, Nishizawa M, Morita Y, Ikeda K, Yamashita Y, Nishikawa M, Kumagai H, Nakane R, Sugahara S, Sugiyama N (2007) Gate dielectric formation and MIS interface characterization on Ge. Microelectron Eng 84(9–10):2314–2319
Mimura T (2002) The early history of the high electron mobility transistor (HEMT). IEEE Trans Microw Theory Tech 50(3):780–782
Bin Yu, Leland Chang, Ahmed S, Haihong Wang, Bell S, Chih-Yuh Yang, Tabery C, Chau Ho, Qi Xiang, Tsu-Jae King, Bokor J, Chenming Hu, Ming-Ren Lin, Kyser D (2002) FinFET scaling to 10 nm gate length. IEDM technical digest:251–254
Xiang J, Lu W, Hu Y, Wu Y, Yan H, Lieber CM (2006) Ge/Si nanowire heterostructures as high-performance field-effect transistors. Nature 441:489–493
Yoda H, Fujita S, Shimomura N, Kitagawa E, Abe K, Nomura K, Noguchi H, Ito J (2012) Progress of STT-MRAM technology and the effect on normally-off computing systems. 2012 I.E. international electron devices meeting (IEDM) technical digest 11(3)
Scott JF, Paz de Araujo CA (1989) Ferroelectric memories. Science 246:1400–1405
Wei Z et al (2008) Highly reliable TaOx ReRAM and direct evidence of redox 997 reaction mechanism. In: Proceedings of the IEDM. pp 293–296
Lai S (2003) Current status of the phase change memory and its future. Electron devices meeting
Masuoka F, Momodomi M, Iwata Y, Shirota R (1987) New ultra high density EPROM and flash EEPROM with NAND structure cell. Electron devices meeting
Datta S, Das B (1990) Electronic analog of the electrooptic modulator. Appl Phys Lett 56:665–667
Sugahara S, Tanaka M (2006) Spin MOSFETs as a basis for spintronics. ACM Trans Storage 2(2):197–219
Li W, Buford B, Jander A, Dhagat P (2014) Acoustically assisted magnetic recording: a new paradigm in magnetic data storage. IEEE Trans Magn 50(3)
Priya S, Inman DJ (eds) (2009) Energy harvesting technologies. Springer
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2016 Springer Japan
About this chapter
Cite this chapter
Kimura, T. (2016). Nanoelectronics with Low Power Consumption. In: Kato, Y., Koyama, M., Fukushima, Y., Nakagaki, T. (eds) Energy Technology Roadmaps of Japan. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55951-1_39
Download citation
DOI: https://doi.org/10.1007/978-4-431-55951-1_39
Published:
Publisher Name: Springer, Tokyo
Print ISBN: 978-4-431-55949-8
Online ISBN: 978-4-431-55951-1
eBook Packages: EnergyEnergy (R0)