Abstract
To utilize the unique and excellent properties of graphene, synthesis of highly crystalline, large-area graphene is necessary. Among various methods to produce graphene, chemical vapor deposition (CVD) using hydrocarbon molecules in the presence of metal catalyst has shown significant progress due to the large-area availability and low cost. In this section, after a review of the growth methods of graphene with the main focus on CVD, our research on the CVD growth of high-quality graphene over heteroepitaxial metal films and domain structure analysis is presented. Recent development of the CVD growth of single-crystalline graphene as well as large-area growth based on roll-to-roll processes is also reviewed together with future prospect of graphene research.
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Acknowledgments
The author acknowledges my group members as well as Prof. M. Tsuji, Dr. H. Hibino, Prof. S. Mizuno, Dr. K. Tsukagoshi, and Dr. K. Ikeda for collaborations. Our work is supported by JSPS funding program for Next Generation World-Leading Researchers (NEXT) and PRESTO-JST.
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Ago, H. (2015). CVD Growth of High-Quality Single-Layer Graphene. In: Matsumoto, K. (eds) Frontiers of Graphene and Carbon Nanotubes. Springer, Tokyo. https://doi.org/10.1007/978-4-431-55372-4_1
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DOI: https://doi.org/10.1007/978-4-431-55372-4_1
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