Abstract
Much attention has been paid to rare-earth (RE)-doped semiconductors as a promising new class of materials that can emit light from the RE 4f-shell by electrical injection. We have grown Er,O-codoped GaAs and Eu-doped GaN by atomically controlled organometallic vapor phase epitaxy (OMVPE), and demonstrated light-emitting diodes (LEDs) with the materials, operating at room temperature under current injection. The LEDs exhibit a characteristic emission due to the intra-4f shell transitions of trivalent RE ions that are effectively excited by the energy transfer from the hosts.
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Acknowledgements
This work was supported, in part, by a Grant-in-Aid for Creative Scientific Research No. 19GS1209 from the Japan Society for the Promotion of Science, and by the Global Centre of Excellence Program “Advanced Structural and Functional Materials Design” from the Ministry of Education, Culture, Sports, Science and Technology, Japan.
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Fujiwara, Y., Terai, Y., Nishikawa, A. (2013). Advanced Materials Design of Rare-Earth-Doped Semiconductors by Organometallic Vapor Phase Epitaxy. In: Kakeshita, T. (eds) Progress in Advanced Structural and Functional Materials Design. Springer, Tokyo. https://doi.org/10.1007/978-4-431-54064-9_21
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DOI: https://doi.org/10.1007/978-4-431-54064-9_21
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