Abstract
The mono-like method, also known as the mono cast, seed cast, and quasi-mono methods, is a candidate next-generation method of casting Si ingots for solar cell applications, replacing conventional casting methods. The mono-like method provides single crystalline Si ingots with the use of almost the same facilities as those used for growth of multicrystalline Si ingots. Hence, the mono-like method has potential to achieve Si ingots with both high quality and low cost. However, the mono-like method faces challenges owing to its crystal growth processes, such as multicrystallization, dislocation generation, and impurity contamination. To address these problems, advanced mono-like methods have been developed. In this chapter, advanced mono-like methods are reviewed from the viewpoint of crystal growth and the fundamentals of the mono-like method.
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References
M. Mrcarica, Photo-Dermatology 19, 28 (2013)
F. Jay, D. Muñoz, T. Desrues, E. Pihan, V. Amaral de Oliveira, N. Enjalbert, A. Jouini, Solar Energ. Mater. Solar Cells 130, 690 (2014)
A. Jouini, in Abstract of the 10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10) (2018), p. 9
N. Stoddard, B. Wu, L. Witting, M. Wagener, Y. Park, G. Rozgonyi, R. Clark, Solid State Phenom. 1, 131–133 (2008)
T.F. Ciszek, G.H. Schwuttke, K.H. Yang, J. Cryst. Growth 46, 527 (1979)
K.E. Ekstrøm, G. Stokkan, R. Søndenå, H. Dalaker, T. Lehmann, L. Arnberg, M. Di Sabation, Phys. Status Solidi A 212, 2278 (2015)
Y.C. Wu, A. Lan, C.F. Yang, C.W. Hsu, C.M. Lu, A. Yang, C.W. Lan, Cryst. Growth Des. 16, 6641 (2016)
M. Trempa, C. Reimann, J. Friedrich, G. Mueller, A. Krause, L. Sylla, T. Richter, J. Cryst. Growth 405, 131 (2014)
I. Takahashi, N. Usami, K. Kutsukake, G. Stokkan, K. Morishita, K. Nakajima, J. Cryst. Growth 312, 897 (2010)
K. Jiptner, Y. Miyamura, H. Harada, B. Gao, K. Kakimoto, T. Sekiguchi, Prog. Photovolt. Res. Appl. 24, 1513 (2016)
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga, Appl. Phys. Express 6, 025505 (2013)
A.L. Endrös, Sol. Energ. Mater. Sol. Cells 72, 109 (2002)
M. Kitamura, N. Usami, T. Sugawara, K. Kutsukake, K. Fujiwara, Y. Nose, T. Shishido, K. Nakajima, J. Cryst. Growth 280, 419 (2005)
K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, K. Nakajima, J. Appl. Phys. 101, 063509 (2007a)
K. Kutsukake, N. Usami, K. Fujiwara, Y. Nose, T. Sugawara, T. Shishido, K. Nakajima, Mater. Trans. 481, 143 (2007b)
T. Hoshikawa, T. Taishi, X. Huang, S. Uda, M. Yamatani, K. Shirasawa, K. Hoshikawa, J. Cryst. Growth 307, 466 (2007)
K. Kutsukake, N. Usami, Y. Ohno, Y. Tokumoto, I. Yonenaga, IEEE J. Photovolt. 4, 84 (2014)
I. Takahashi, S. Joonwichien, T. Iwata, N. Usami, Appl. Phys. Express 8, 105501 (2015)
D. Hu, S. Yuan, L. He, H. Chen, Y. Wan, X. Yu, D. Yang, Solar Energ. Mater Solar Cells 140, 121 (2015)
C.Y. Lan, Y.C. Wu, A. Lan, C.F. Yang, C. Hsu, C.M. Lu, A. Yang, C.W. Lan, J. Cryst. Growth 475, 136 (2017)
X. Gu, X. Yu, K. Guo, L. Chen, D. Wang, D. Yang, Solar Energ. Mater. Solar Cells 101, 95 (2012)
F. Zhang, X. Yu, S. Yuan, L. He, H. Chen, R. Hu, and D. Yang, in Abstract of the 10th International Workshop on Crystalline Silicon for Solar Cells (CSSC-10) (2018), p. 19
B. Gao, S. Nakano, H. Harada, Y. Miyamura, T. Sekiguchi, K. Kakimoto, J. Cryst. Growth 352, 47 (2012)
Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi, J. Cryst. Growth 401, 133 (2014)
Acknowledgment
The author is very grateful to Professor Kazuo Nakajima from Tohoku University for fruitful discussions about the fundamentals of crystal growth and defects generation of mono-like Si.
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Kutsukake, K. (2018). Growth of Crystalline Silicon for Solar Cells: Mono-Like Method. In: Yang, D. (eds) Handbook of Photovoltaic Silicon. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-52735-1_35-1
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DOI: https://doi.org/10.1007/978-3-662-52735-1_35-1
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