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Semiconductors Under Extreme Conditions

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X-Ray Absorption Spectroscopy of Semiconductors

Part of the book series: Springer Series in Optical Sciences ((SSOS,volume 190))

Abstract

The importance of exploring physical properties and phase transitions of semiconductors under extreme conditions of high pressure \(P\) and/or high temperature \(T\) are illustrated using basic thermodynamic concepts. The specific role of XAS in the investigation of amorphous or liquid systems is addressed with emphasis on its unique sensitivity to the short range order. Current techniques for the performance of high-pressure and/or high temperature XAS measurements are briefly reviewed. Examples of XAS results on simple systems such as liquid and amorphous selenium and germanium are discussed.

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Author information

Authors and Affiliations

  1. Physics Division, School of Science and Technology, Università di Camerino, Via Madonna delle Carceri 9, 62032, Camerino, Italy

    Andrea Di Cicco

  2. Dipartimento di Scienze Fisiche e Chimiche, Università degli Studi dell’Aquila, 67100, Coppito, AQ, Italy

    Adriano Filipponi

Authors
  1. Andrea Di Cicco
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  2. Adriano Filipponi
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Correspondence to Andrea Di Cicco .

Editor information

Editors and Affiliations

  1. Friedrich-Schiller-University Jena Institute of Solid State Physics, Jena, Germany

    Claudia S. Schnohr

  2. Department of Electronic Materials Engineering, The Australian National University, Canberra, Australia

    Mark C. Ridgway

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Di Cicco, A., Filipponi, A. (2015). Semiconductors Under Extreme Conditions. In: Schnohr, C., Ridgway, M. (eds) X-Ray Absorption Spectroscopy of Semiconductors. Springer Series in Optical Sciences, vol 190. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-662-44362-0_9

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  • DOI: https://doi.org/10.1007/978-3-662-44362-0_9

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