Abstract
Poly-Si TFTs are now in mass production for small diagonal displays, and, in this article, the fabrication and performance of these devices are discussed, with particular focus on the formation of poly-Si by excimer laser crystallization, the issues surrounding TFT architecture, and the performance artifacts associated with the high electrostatic field at the drain junction.
Abbreviations
- AMLCD :
-
Active matrix liquid crystal display
- AMOLED :
-
Active matrix organic light-emitting diode
- a-Si:H :
-
Hydrogenated amorphous silicon
- DOS :
-
Density of states
- ELA :
-
Excimer laser annealing
- GOLDD :
-
Gate overlapped lightly doped drain
- HCD :
-
Hot-carrier damage
- LDD :
-
Lightly doped drain
- LPCVD :
-
Low pressure chemical vapor deposition
- MOSFET :
-
Metal oxide semiconductor field effect transistor
- PECVD :
-
Plasma-enhanced chemical vapor deposition
- SLG :
-
Super-lateral growth
- SOG :
-
System on glass
- SOI :
-
Silicon on insulator
Further Reading
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Brotherton, S.D. (2015). Polycrystalline Silicon Thin Film Transistors (Poly-Si TFTs). In: Chen, J., Cranton, W., Fihn, M. (eds) Handbook of Visual Display Technology. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-35947-7_48-2
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