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Monte Carlo Techniques for Carrier Transport in Semiconductor Materials

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Semiconductor Modeling Techniques

Part of the book series: Springer Series in Materials Science ((SSMATERIALS,volume 159))

Abstract

Monte Carlo has become a powerful tool for describing complex systems with many degrees of freedom. It involves simulating a combination of deterministic and stochastic processes. Here, after a basic introduction to the technique, we focus on its application in the analysis of carrier transport in semiconductors. This method is applied to GaAs and to dilute nitride materials.

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Notes

  1. 1.

    The simulation time is the time after which the carriers stop drifting. It should not be confused with the time required for computer simulation, which will be referred to as computational time.

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Authors and Affiliations

  1. University of Bristol, Merchant Venturers Building, Woodland Rd, Bristol, BS8 1UB, UK

    N. Vogiatzis & Judy M. Rorison

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  1. N. Vogiatzis
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  2. Judy M. Rorison
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Correspondence to N. Vogiatzis .

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Editors and Affiliations

  1. , School of Computer Science and, University of Essex, Essex, CO4 3SQ, Montserrat

    Naci Balkan

  2. , Département de physique, Inst National des Sciences Appliquées, avenue de Rangueil 135, Toulouse cedex, 31077, France

    Marie Xavier

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Vogiatzis, N., Rorison, J.M. (2012). Monte Carlo Techniques for Carrier Transport in Semiconductor Materials. In: Balkan, N., Xavier, M. (eds) Semiconductor Modeling Techniques. Springer Series in Materials Science, vol 159. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-27512-8_5

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  • DOI: https://doi.org/10.1007/978-3-642-27512-8_5

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