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Semiconductor-On-Insulator Materials for Nanoelectronics Applications

  • Book
  • © 2011

Overview

Editors:
  1. Alexei Nazarov

    1. , Lashkaryov Inst. of Semiconductor Physic, National Academy of Sciences of Ukraine, Kyiv, Ukraine

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  2. J.-P. Colinge

    1. Tyndall National Institute, """Lee Maltings""", University College, Cork, Ireland

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  3. Francis Balestra

    1. IMEP-LAHC, Sinano Institute, Grenoble Cedex 1, France

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  4. Jean-Pierre Raskin

    1. Microwave Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

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  5. Francisco Gamiz

    1. Nanoelectronics Research Group, Departmento de Electrónica, Universidad de Granada, Granada, Spain

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  6. V.S. Lysenko

    1. , Lashkaryov Inst. of Semiconductor Physic, National Academy of Science of Ukraine, Kyiv, Ukraine

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  • Written by experts from different countries Gives a modern approach to semiconductors Intigrates classic materials and new concepts
  • Includes supplementary material: sn.pub/extras

Part of the book series: Engineering Materials (ENG.MAT.)

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Table of contents (22 chapters)

  1. Front Matter

    Pages i-ix
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  2. New Semiconductor-On-Insulator Materials

    1. Front Matter

      Pages 1-1
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  3. New semiconductor-on-insulator materials

    1. Germanium Processing

      • H. Gamble, B. M. Armstrong, P. T. Baine, Y. H. Low, P. V. Rainey, S. J. N. Mitchell et al.
      Pages 3-29

    2. Low-Temperature Fabrication of Germanium-on-Insulator Using Remote Plasma Activation Bonding and Hydrogen Exfoliation

      • C. A. Colinge, K. Y. Byun, I. P. Ferain, R. Yu, M. Goorsky
      Pages 31-46

    3. Engineering Pseudosubstrates with Porous Silicon Technology

      • N. P. Blanchard, A. Boucherif, Ph. Regreny, A. Danescu, H. Magoariec, J. Penuelas et al.
      Pages 47-65

    4. Confined and Guided Vapor–Liquid–Solid Catalytic Growth of Silicon Nanoribbons: From Nanowires to Structured Silicon-on-Insulator Layers

      • A. Lecestre, E. Dubois, A. Villaret, T. Skotnicki, P. Coronel, G. Patriarche et al.
      Pages 67-89

    5. SOI CMOS: A Mature and Still Improving Technology for RF Applications

      • Jean-Pierre Raskin
      Pages 91-119

  4. Physics of Modern SemOI Devices

    1. Front Matter

      Pages 121-121
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  5. Physics of modern SemOI devices

    1. Silicon-based Devices and Materials for Nanoscale FETs

      • Francis Balestra
      Pages 123-139

    2. FinFETs and Their Futures

      • N. Horiguchi, B. Parvais, T. Chiarella, N. Collaert, A. Veloso, R. Rooyackers et al.
      Pages 141-153

    3. Ultrathin Body Silicon on Insulator Transistors for 22 nm Node and Beyond

      • T. Poiroux, F. Andrieu, O. Weber, C. Fenouillet-Béranger, C. Buj-Dufournet, P. Perreau et al.
      Pages 155-168

    4. Ultrathin n-Channel and p-Channel SOI MOSFETs

      • F. Gámiz, L. Donetti, C. Sampedro, A. Godoy, N. Rodríguez, F. Jiménez-Molinos
      Pages 169-185

    5. Junctionless Transistors: Physics and Properties

      • J. P. Colinge, C. W. Lee, N. Dehdashti Akhavan, R. Yan, I. Ferain, P. Razavi et al.
      Pages 187-200

    6. Gate Modulated Resonant Tunneling Transistor (RT-FET): Performance Investigation of a Steep Slope, High On-Current Device Through 3D Non-Equilibrium Green Function Simulations

      • Aryan Afzalian, Jean-Pierre Colinge, Denis Flandre
      Pages 201-214

    7. Ohmic and Schottky Contact CNTFET: Transport Properties and Device Performance Using Semi-classical and Quantum Particle Simulation

      • Huu-Nha Nguyen, Damien Querlioz, Arnaud Bournel, Sylvie Retailleau, Philippe Dollfus
      Pages 215-235

    8. Quantum Simulation of Silicon-Nanowire FETs

      • Marco Pala
      Pages 237-249

    9. Single Dopant and Single Electron Effects in CMOS Devices

      • M. Sanquer, X. Jehl, M. Pierre, B. Roche, M. Vinet, R. Wacquez
      Pages 251-263

  6. Diagnostics of the SOI Devices

    1. Front Matter

      Pages 265-265
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  7. Diagnostics of the SOI devices

    1. SOI MOSFET Transconductance Behavior from Micro to Nano Era

      • J. A. Martino, P. G. D. Agopian, E. Simoen, C. Claeys
      Pages 267-286

    2. Investigation of Tri-Gate FinFETs by Noise Methods

      • N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen, C. Claeys
      Pages 287-306
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Keywords

About this book

"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.

Editors and Affiliations

  • , Lashkaryov Inst. of Semiconductor Physic, National Academy of Sciences of Ukraine, Kyiv, Ukraine

    Alexei Nazarov

  • Tyndall National Institute, """Lee Maltings""", University College, Cork, Ireland

    J.-P. Colinge

  • IMEP-LAHC, Sinano Institute, Grenoble Cedex 1, France

    Francis Balestra

  • Microwave Laboratory, Université Catholique de Louvain, Louvain-la-Neuve, Belgium

    Jean-Pierre Raskin

  • Nanoelectronics Research Group, Departmento de Electrónica, Universidad de Granada, Granada, Spain

    Francisco Gamiz

  • , Lashkaryov Inst. of Semiconductor Physic, National Academy of Science of Ukraine, Kyiv, Ukraine

    V.S. Lysenko

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